Anisotropic etching for forming isolation slots in silicon beam leaded integrated circuits

Waggener, H.A.; Kragness, R.C.; Tyler, A.L.

doi:10.1109/iedm.1967.187830

Cited by 12 publications

(5 citation statements)

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“…Anisotropic (crystallographically preferential) etching of (100) orientation Si wafers is widely used to permit close control of lateral etching dimensions in silicon integrated circuits (37,38). Etching solutions and conditions are employed which result in dissolution of the Si in (100) directions at a rate which is several orders of magnitude higher than the rate in the (111) directions.…”

Section: Anisotropic Etching Of Siliconmentioning

confidence: 99%

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Applications of Electrochemistry to Fabrication of Semiconductor Devices

Schnable

Schmidt

1976

J. Electrochem. Soc.

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This paper reviews some of the principal applications of electrochemistry to fabrication of semiconductor devices. Some of the electrochemical techniques used in fabrication of early semiconductor devices, such as chemical polishing, plating of contacts, dislocation etches, and junction delineation techniques continue to be used in manufacturing of present‐day devices. Principal newer uses of electrochemistry are in anisotropic etching of patterns in single crystal Si, in preferential etching of layers of a certain conductivity type or doping level without dissolution of an underlying (or adjacent) layer of Si of different type or doping level, in anodization of aluminum metallization on Si devices, and in Au plating for conductive layers in several types of silicon devices. A wide variety of other electrochemical techniques are being used in material and device characterization, and in fabrication of developmental‐type devices.

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Section: Anisotropic Etching Of Siliconmentioning

confidence: 99%

“…A considerable amount of information has been published on the effects of etchant composition, substrate doping level (41,56), and etching conditions on rate of etching of various orientations of silicon (37,40,(57)(58)(59)(60)(61)(62). Anisotropic etching of germanium has also been described (63).…”

Section: Anisotropic Etching Of Siliconmentioning

confidence: 99%

Applications of Electrochemistry to Fabrication of Semiconductor Devices

Schnable

Schmidt

1976

J. Electrochem. Soc.

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“…Silicon crystal etches 100-200 times faster in the (100) direction than it does in the (110) direction. This is the basis for the anisotropic etch of silicon [62][63][64][65][66][67][68]. Mechanically, the etching procedure is straightforward: …”

Section: Koh Etchmentioning

confidence: 99%

“…The silicon wafer used for this process is cut in < 110 > orientation so that (110) direction is perpendicular to the wafer surface and the (111) direction is along the surface. In this case the advantage is taken of the anisotropic etch of silicon [62], where silicon in the (111) direction etches hundreds of times slower than in the (110) direction in the potassium hydroxide (KOH) solution. The initial pattern is formed in the Poly(methyl methacrylate) (PMMA) electron beam resist, which is then transferred onto the silicon wafer via the Cr lift-o↵ process and the reactive ion etch (RIE).…”

Section: Silicon Templatementioning

confidence: 99%

Plasmon Enhanced Photoemission

Polyakov

2012

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Next generation ultrabright light sources will operate at megahertz repetition rates with temporal resolution in the attosecond regime. For an X-Ray Free Electron Laser (FEL) to operate at such repetition rate requires a high quantum e ciency (QE) cathode to produce electron bunches of 300 pC per 1.5 µJ incident laser pulse. Semiconductor photocathodes have su cient QE in the ultraviolet (UV) and the visible spectrum, however, they produce picosecond electron pulses due to the electron-phonon scattering. On the other hand, metals have two orders of magnitude less QE, but can produce femtosecond pulses, that are required to form the optimum electron distribution for high e ciency FEL operation. In this work, a novel metallic photocathode design is presented, where a set of nano-cavities is introduced on the metal surface to increase its QE to meet the FEL requirements, while maintaining the fast time response.Photoemission can be broken up into three steps: (1) photon absorption, (2) electron transport to the surface, and (3) crossing the metal-vacuum barrier. The first two steps can be improved by making the metal completely absorbing and by localizing the fields closer to the metal surface, thereby reducing the electron travel distance. Both of these e↵ects can be achieved by coupling the incident light to an electron density wave on the metal surface, represented by a quasi-particle, the Surface Plasmon Polariton (SPP).The photoemission then becomes a process where the photon energy is transferred to an SPP and then to an electron. The dispersion relation for the SPP defines the region of energies where such process can occur. For example, for gold, the maximum SPP energy is 2.4 eV, however, the work function is 5.6 eV, therefore, only a fourth order photoemission process is possible. In such process, four photons excite four plasmons that together excite only one electron. The yield of such non-linear process depends strongly on the light intensity.In this work, the structure consisted of rectangular nano-grooves (NGs) arranged in a subwavelength grating on a metal surface is presented that provides a dramatic increase in the metal's absorption, field localization, and field enhancement. When light is polarized perpendicular to the orientation of the grooves a standing SPP wave is excited along the vertical walls in the NGs, that act as Fabry-Perot resonators. By adjusting the geometry of 2 the NGs and the period of the subwavelength grating the resonance can be fine tuned to a desired position, for example, the laser fundamental wavelength, anywhere from the UV to the near infrared (NIR).Two types of gratings are presented: (a) a gold grating with period of 600 nm, and (b) an aluminum-gold grating with a period of 100 nm; both with resonance at 720 nm. In each case, strong on-resonance absorption was observed, with over 98% for grating (b). Unlike the grating-coupled SPP waves, where the angle is well defined by the momentum matching condition, the resonant NGs allow coupling to the standing modes at a range...

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“…An oxide is grown on the substrate, whose resistivity is determined by the desired collector resistivity, and windows opened by conventional photolithography processing. These windows allow the isolation moats to be etched, usually with an orientation dependent etch which attacks the silicon in the ~1 0 0 ~ direction as much a s 100 times faster than in the ~1 1 1 ) direction (19,(21)(22)(23). Thus the cross section of an etched groove will appear triangular as shown in Fig.…”

mentioning

confidence: 99%

Dielectric Isolation: Comprehensive, Current and Future

Bean

Runyan

1977

J. Electrochem. Soc.

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The continually increasing, widespread use of integrated circuits requires improved isolation techniques and characteristics beyond those obtainable with p‐n junctions. Junction isolated planar circuits have several limitations that dielectric isolation (DI) can substantially impact. For example, DI allows increased packing density, eliminates unwanted SCR action with the substrate (particularly important in cross points and radiation hardened devices), and provides higher collector‐base breakdown voltages. Unfortunately, such structures also have some limitations such as cost and manufacturing process problems. The advantages, problems, and future projections of DI circuit manufacturing are discussed following a review of the semiconductor industry's current DI processing technology.

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Anisotropic etching for forming isolation slots in silicon beam leaded integrated circuits

Abstract: Anisotropic silicon etches which preferentially attack the 100 and 1110) crystal planes have been used to form narrow well-controlled d a t i o n slots in silicon beam-leaded integrated circuits.

Cited by 12 publications

References 0 publications

Applications of Electrochemistry to Fabrication of Semiconductor Devices

Applications of Electrochemistry to Fabrication of Semiconductor Devices

Plasmon Enhanced Photoemission

Dielectric Isolation: Comprehensive, Current and Future

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