2017
DOI: 10.1016/j.mtphys.2017.12.005
|View full text |Cite
|
Sign up to set email alerts
|

Anisotropic thermal conductivity of 4H and 6H silicon carbide measured using time-domain thermoreflectance

Abstract: Silicon carbide (SiC) is a wide bandgap (WBG) semiconductor with promising applications in high-power and high-frequency electronics. Among its many useful properties, the high thermal conductivity is crucial. In this letter, the anisotropic thermal conductivity of three SiC samples, n-and SI 6H-SiC (V-doped 1×10 17 cm -3 ), is measured using femtosecond laser based time-domain thermoreflectance (TDTR) over a temperature range from 250 K to 450 K. We simultaneously measure the thermal conductivity parallel to … Show more

Help me understand this report
View preprint versions

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

4
79
2

Year Published

2018
2018
2022
2022

Publication Types

Select...
8

Relationship

2
6

Authors

Journals

citations
Cited by 108 publications
(85 citation statements)
references
References 38 publications
4
79
2
Order By: Relevance
“…19 The uncertainties of Kz, K||(θ) and G are then estimated using a multivariate error propagation formalism based on Jacobi matrices, which was first developed by Yang et al 20 and widely used in some related works. [21][22][23][24] The effect of the signal noise, manifested as the standard deviation σ between the measured data points and the thermal model prediction, is also included in the estimated uncertainty. Figure 1(d) shows that from a typical elliptical-beam TDTR measurement, Kz and K||(θ) of β-Ga2O3 can usually be determined with an uncertainty of 11% and 15%, respectively.…”
Section: Textmentioning
confidence: 99%
“…19 The uncertainties of Kz, K||(θ) and G are then estimated using a multivariate error propagation formalism based on Jacobi matrices, which was first developed by Yang et al 20 and widely used in some related works. [21][22][23][24] The effect of the signal noise, manifested as the standard deviation σ between the measured data points and the thermal model prediction, is also included in the estimated uncertainty. Figure 1(d) shows that from a typical elliptical-beam TDTR measurement, Kz and K||(θ) of β-Ga2O3 can usually be determined with an uncertainty of 11% and 15%, respectively.…”
Section: Textmentioning
confidence: 99%
“…Since these two sources of uncertainty are independent of each other, the total uncertainty for the Kx is determined as 2 2 18.5 9 % 21% is slightly lower than a first-principles calculation in literature (62 W m -1 K -1 ) 35 but is consistent with another TDTR measurement of Kz of ZnO [0001] (55 W m -1 K -1 ) 29 , which has its c-axis along the through-plane direction. [11][12][13][14][15][16][17][18][19][20] with the short radius of the elliptical beam oriented to be (a) parallel to and (b) perpendicular to the c-axis of ZnO, respectively. The curves of 30% bounds on the best-fitted thermal conductivity values are also included as a guide of reading to the sensitivity of the signals.…”
Section: Comparison Of the Two Methods Via Experimental Demonstrmentioning
confidence: 99%
“…The curves of 30% bounds on the best-fitted thermal conductivity values are also included as a guide of reading to the sensitivity of the signals. Figure 10 shows a summary of the in-plane thermal conductivity tensor of ZnO [11][12][13][14][15][16][17][18][19][20] measured by the beam-offset method and the elliptical-beam method under their optimal experimental conditions, respectively. Overall, these two methods compare relatively well with each other, with the measured in-plane thermal conductivities within the error bars.…”
Section: Comparison Of the Two Methods Via Experimental Demonstrmentioning
confidence: 99%
See 1 more Smart Citation
“…Advanced by the silicon (Si) industry, techniques to grow single crystals to certain dimensions and with specific electrical, optical, or thermal properties are both the basis for academic research and instrumental to the development of practical devices. Increasingly greater numbers of useful semiconducting materials, e.g., silicon carbide (SiC) [1][2][3] and gallium arsenide (GaAs) 4 , have benefited from the development of such production techniques and are now widely used in daily life. With the development of modern supercomputers, additional findings on novel and existing advanced materials from first-principles calculations are being investigated 5 .…”
mentioning
confidence: 99%