Anisotropy of photocurrent for two-photon absorption photodetector made of hemispherical silicon with $(\overline{1}10)$ plane

Bao, Shi; Liu, X.; Chen, Z.; Jia, Gang; Cao, Kun; Zhang, Yongzheng; Wang, S.; Ren, Cheng; Zhao, Jiyong

doi:10.1007/s00340-008-3263-4

Cited by 14 publications

(8 citation statements)

References 12 publications

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“…1 and 2, the quadratic dependence of the photocurrent on the bias voltage further clarifies that DFA is responsible for the photocurrent. This quadratic dependence is quite different from that of TPA in which the variation in the nonlinear photoresponse with applied bias exhibits saturation [18,28,29] . Moreover, the electric field-induced DFA evidently affects the native DFA in the SI GaAs sample.…”

contrasting

confidence: 59%

Quadratic nonlinear response to 1.56-\mu m continuous wave laser in semi-insulating GaAs

Liu¹,

Li²,

Chen³

et al. 2013

中国光学快报

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The nonlinear photoresponse to a 1.56-µm infrared continuous wave laser in semi-insulating (SI) galliumarsenide (GaAs) is examined. The double-frequency absorption (DFA) is responsible for the nonlinear photoresponse based on the quadratic dependence of the photocurrent separately on the coupled optical power and bias voltage. The electric field-induced DFA remarkably affects the native DFA in SI GaAs. The surface electric field or the surface band-bending of SI GaAs significantly affects the magnitude variation of the photocurrent and dark current.

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contrasting

confidence: 59%

Quadratic nonlinear response to 1.56-\mu m continuous wave laser in semi-insulating GaAs

Liu¹,

Li²,

Chen³

et al. 2013

中国光学快报

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“…The responsivity of the two‐photon photodetector at a fixed bias of 5 V as a function of wavelength is plotted in Figure S13 (Supporting Information). We chose 106 mW as the maximal optical power, and estimated the responsivity of the detector to be 1.4 mA W ‐1 at a 5 V bias, which was three orders higher than that previous report on MAPbBr 3 SC, and comparable to those of the devices based on Si and GaAs . The obtained high‐performance visible and IR dual‐modal photodetecting behavior is attributed to the high visible and two‐photon light absorption capability, larger carrier mobility, and large carrier diffusion length of the CsPbBr 3 SC perovskites.…”

Section: Comparison Of Optical and Electrical Properties Of Cspbbr3 Smentioning

confidence: 89%

Ultralarge All‐Inorganic Perovskite Bulk Single Crystal for High‐Performance Visible–Infrared Dual‐Modal Photodetectors

Song

Cui

et al. 2017

Advanced Optical Materials

269

241

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Visible‐infrared dual‐modal light harvesting is crucial for various optoelectronic devices, particularly for solar cells and photodetectors. For the first time, this study reports on large 25 cm3‐volume all‐inorganic perovskite CsPbBr3 single crystal (SC) with an emphasis on the observed visible‐infrared dual‐modal light harvesting and sensing as demonstrated by the high‐performance visible‐infrared dual‐modal photodetectors. First, ultralarge 25 cm3‐volume CsPbBr3 SC ingots with trapping state density as low as of 1 × 109 cm−3 have been achieved by a modified Bridgman growth method. The volume reported here is the largest CsPbX3 (X = Cl, Br, I) all‐inorganic perovskite system up to now, and the SC can be facilely cut into SC wafers with a diameter of 25 mm for various optoelectronic devices. Furthermore, these CsPbBr3 SCs exhibit a visible absorbance coefficient, a near‐infrared (IR) two‐phonon absorption coefficient, a carrier diffusion length, and a mobility as high as of 105 cm−1, 3.7 cm per Goeppert‐Mayer (GM), 10 µm and 2000 cm2 V−1 s−1, respectively. These merits match well to the requirements of high‐performance Vis‐IR dual‐modal light harvesting optoelectronic devices, which has been demonstrated by the CsPbBr3 SC photodetectors operated under the irradiation of both visible and IR light sources with light on/off ratio higher than 103. These results demonstrate the CsPbBr3 SCs with high visible‐infrared dual‐modal light harvesting capability and excellent electrical transporting properties have a huge potential in various optoelectronic devices, such as solar cells, photodetectors, and lasers.

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“…An additional benefit of Si-PDs is their high compatibility with electronic devices. For this reason, photoelectric conversion devices exploiting effects such as mid-bandgap absorption [84][85][86], surface-state absorption [87,88], internal photoemission absorption [89,90], and two-photon absorption [91,92] in Si have been reported. However, in the case of mid-bandgap absorption, for example, the photosensitivity at a wavelength of 1.3 µm is limited to only 50 mA/W [84].…”

Section: Infrared Photodetector With Optical Amplificationmentioning

confidence: 99%

Progress in Nanophotonics 3

Ohtsu¹,

Yatsui²

2015

Nano-Optics and Nanophotonics

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The Springer Series in Nano-Optics and Nanophotonics provides an expanding selection of research monographs in the area of nano-optics and nanophotonics, science-and technology-based on optical interactions of matter in the nanoscale and related topics of contemporary interest. With this broad coverage of topics, the series is of use to all research scientists, engineers and graduate students who need up-to-date reference books. The editors encourage prospective authors to correspond with them in advance of submitting a manuscript. Submission of manuscripts should be made to the editor-in-chief, one of the editors or to Springer. This work is subject to copyright. All rights are reserved by the Publisher, whether the whole or part of the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations, recitation, broadcasting, reproduction on microfilms or in any other physical way, and transmission or information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed. Exempted from this legal reservation are brief excerpts in connection with reviews or scholarly analysis or material supplied specifically for the purpose of being entered and executed on a computer system, for exclusive use by the purchaser of the work. Duplication of this publication or parts thereof is permitted only under the provisions of the Copyright Law of the Publisher's location, in its current version, and permission for use must always be obtained from Springer. Permissions for use may be obtained through RightsLink at the Copyright Clearance Center. Violations are liable to prosecution under the respective Copyright Law. The use of general descriptive names, registered names, trademarks, service marks, etc. in this publication does not imply, even in the absence of a specific statement, that such names are exempt from the relevant protective laws and regulations and therefore free for general use. While the advice and information in this book are believed to be true and accurate at the date of publication, neither the authors nor the editors nor the publisher can accept any legal responsibility for any errors or omissions that may be made. The publisher makes no warranty, express or implied, with respect to the material contained herein.Printed on acid-free paper Springer is part of Springer Science+Business Media (www.springer.com) Preface to Progress in NanophotonicsAs the first example, recent advances in photonic systems demand drastic increases in the degree of integration of photonic devices for large-capacity, ultrahigh-speed signal transmission and information processing. Device size has to be scaled down to nanometric dimensions to meet this requirement, which will become even more strict in the future. As the second example, photonic fabrication systems demand drastic decreases in the size of the fabricated patterns for assembling ultra-largescale integrated circuits. These requirements cannot be met even if t...

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Anisotropy of photocurrent for two-photon absorption photodetector made of hemispherical silicon with $(\overline{1}10)$ plane

Cited by 14 publications

References 12 publications

Quadratic nonlinear response to 1.56-\mu m continuous wave laser in semi-insulating GaAs

Quadratic nonlinear response to 1.56-\mu m continuous wave laser in semi-insulating GaAs

Ultralarge All‐Inorganic Perovskite Bulk Single Crystal for High‐Performance Visible–Infrared Dual‐Modal Photodetectors

Progress in Nanophotonics 3

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