Annealing effect on conductivity anisotropy in indium selenide single crystals

Abstract

Electrical conductivity along and across the layers, its anisotropy, and the Hall effect for undoped and annealed Te‐doped samples of InSe are investigated in the temperature range 80 to 400 K. Variations of electrical parameters of annealed samples are determined during the relaxation process. It is established that peculiarities of the annealing effect as well as the relaxation process in annealed samples are induced by the presence of interlayer impurity precipitates of In atoms adsorbed by stacking faults. High values of the anisotropy ratio in n‐InSe and its activated character below 250 K are caused by these impurity aggregates.

Charge Carrier Transport in Van Der Waals Semiconductor InSe Intercalated with RbNO3 Probed by Direct Current Methods

“…Later, this assumption was confirmed through a numerical analysis of the conductivity across the layers for samples with different σ ⊥C /σ C ratios at different sample dimensions and contacts to them [24]. Thus, this technique to measure σ C in crystals with high σ ⊥C /σ C anisotropy is sufficiently reliable, and was later applied in other studies [25][26][27].…”

“…It should be noted that during the insertion of the ionic salt between the layers of n-InSe, the samples are simultaneously subjected to thermal annealing, as the intercalation is done at high temperatures. Usually, a vacuum treatment at 450-550 • C results in an increase of free carriers because of the dissociation of interlayer In inclusions that continues for 2 h [26]. However, at the conditions used for the intercalation (low temperature and duration), the effect of annealing on the electrical parameters is not determinative.…”

Giant magnetoresistance effect in InSe<β-CD<FeSO4>> clathrate

“…8) due to the stepwise expansion of the crystalline lattice [13], modulating hierarchical potential of cavitate and Zeeman splitting. In addition, the magnetic field can change the asymmetry of the density of states above and below the Fermi level, significantly affecting the current flow [14]. From the above energy diagram it is easy to see that at a voltage U higher than ∆E ⊥ the upper edge of the conduction miniband of one layer falls below the lower edge of the conduction mini-band of the other layer and the electrons have nowhere to move.…”

“…It is steady in the air and in water. The resistivity, depending on the purity of the sample, varies from 10 2 to 10 4 Ohm•m at T = 300 K [13][14][15][16]. The sharp maximum of photoconductivity lies at 1.03 µm, which coincides with the edge of the fundamental absorption, which corresponds to the bandgap of 1.20 eV at T = 300 K [16,17].…”

The influence of growth method and conditions on the electrical properties of SnS₂ crystals

“…В діапазоні температур 77-300 K залежність питомого опору від температури високоомних кристалів описується виразом: Таким чином, велике значення анізотропії провідності в шаруватих кристалах SnS 2 , що не відповідає анізотропії ефективних мас носіїв заряду, характерне практично для більшості шаруватих кристалів. Так, наприклад, для шаруватих кристалів InSe анізотропія електропровідності досягає  ||c /  c ~ 10 5 [26], натомість за даними циклотронного резонансу [27] ефективні маси електронів перпендикулярно до площини шарів (m e = 0.08m 0 ) навіть менші ніж в площині шарів (m e|| = 0.13m 0 ).…”