Anomalous junction leakage current induced by STI dislocations and its impact on dynamic random access memory devices

Ha, Daewon; Cho, Changhyun; Shin, Dong-won; Koh, G.H.; Chung, Taeyoung; Kim, Kinam

doi:10.1109/16.760401

Cited by 52 publications

(9 citation statements)

References 12 publications

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“…This stress was thought to be generated during some oxidation process. 1,2) Therefore, the liner silicon nitride film could suppress the additional oxidation formed during the oxidation that followed, especially gate oxidation. However, the junction leakage reduction was not perfectly explained by the stress relaxation.…”

Section: Resultsmentioning

confidence: 99%

“…The key research field related to the STI technique was the correlation of junction leakage with the local stress at the top and bottom corners of a trench during the oxidation process. 1,2) The interface between the field oxide and the active region of a transistor is regarded as the major junction leakage path. This is the influential parameter in integrated circuits, especially in a dynamic random-access memory (DRAM).…”

Section: Introductionmentioning

confidence: 99%

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Effect of Fluorine on Characteristics of Shallow Trench Isolation Prepared Using High-Density Plasma Chemical Vapor Deposition Including NF₃ Chemistry

Chung¹,

Chung²,

Lee³

et al. 2006

jjap

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Ab initio electron scattering calculations using the R-matrix approach have been performed for N + 2 within a three-state valence configuration-interaction model (VCI). The lowest three electronic target states (X 2 + u , A 2 u and the B 2 + u ) of this molecular nitrogen cation are included in the close-coupling method, with each state being represented by a valence CI approximation. From a detailed analysis of the resonance structure found in our work for the 1,3 + g symmetries we find four prominent Rydberg series of the type npπ u , nfπ u , npσ u , nfσ u and a 2pσ u interloper resonance. This 2pσ u interloper molecular resonance associated with the B state of N + 2 is seen to cause distortions of the resulting resonance spectra. A comparison of our total cross sections for the X-B transition shows excellent agreement with the available experimental data. † Permanent address:

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Effect of Fluorine on Characteristics of Shallow Trench Isolation Prepared Using High-Density Plasma Chemical Vapor Deposition Including NF₃ Chemistry

Chung¹,

Chung²,

Lee³

et al. 2006

jjap

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“…The behavior of the STI dislocations and the effect on the junction leakage characteristics during the fabrication of dynamic random access memory (DRAM) with 0.15 m technology have been reported in Ref. [9]. In this work, we investigate the influence of STI mechanical stress on the hysteresis effect of PD SOI NMOS devices.…”

mentioning

confidence: 95%

The Impact of Shallow-Trench-Isolation Mechanical Stress on the Hysteresis Effect of Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effects

Luo¹,

Chen²,

Chai³

et al. 2014

Chinese Phys. Lett.

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The impact of shallow trench isolation (STI) mechanical stress on the hysteresis effect in the output characteristics is measured in partially depleted (PD) silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistors (MOSFETs). We develop 𝐼D hysteresis, which is defined as the difference between 𝐼D versus 𝑉D forward sweep and reverse sweep. The fabricated devices show positive and negative peaks in 𝐼D hysteresis. The experimental results show that 𝐼D hysteresis declined as the STI mechanical stress increases. We also elaborate on the impact of STI mechanical stress on the 𝐼D hysteresis of PD SOI n-type MOSFETs.

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“…Recently, defects resulting from shallow-trench-isolation (STI) mechanical stress are identified as one of main causes of anomalous off-state leakage current in complementary metal-oxide-semiconductor field-effect transistor (CMOS-FET). 1,2) The mechanical stress issue will become more significant in nano scale CMOS technologies because the channel becomes closer to the STI edge with the continuous shrinking of the active area. On the other hand, strain engineering such as the use of a SiGe source/drain (S/D) 3,4) has been widely used to improve device mobility for advanced high-speed and low-power CMOS devices.…”

Section: Introductionmentioning

confidence: 99%

Narrow Width and Length Dependence of SiGe and Sallow-Trench-Isolation Stress Induced Defects in 45 nm p-Type Metal–Oxide–Semiconductor Field-Effect Transistors with Strained SiGe Source/Drain

Cheng

Fang

Hsieh

et al. 2009

jjap

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The effects of mechanical stress induced by both a strained SiGe source/drain (S/D) and shallow-trench-isolation (STI) on interface states in 45 nm p-type metal-oxide-semiconductor field-effect transistors (PMOSFETs) were studied in detail. An improved low gate-leakage gated-diode measurement was applied to the investigation of total induced defects. As channel width was scaled down, total defect density decreased markedly with decreasing channel length to a value less than 0.24 mm. It was opposite to the increase with decreasing channel length in conventional deep-submicron devices without SiGe S/D. The mechanism was also analyzed and proven by technology computer aided design package (T-CAD) simulations.

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Anomalous junction leakage current induced by STI dislocations and its impact on dynamic random access memory devices

Cited by 52 publications

References 12 publications

Effect of Fluorine on Characteristics of Shallow Trench Isolation Prepared Using High-Density Plasma Chemical Vapor Deposition Including NF₃ Chemistry

Effect of Fluorine on Characteristics of Shallow Trench Isolation Prepared Using High-Density Plasma Chemical Vapor Deposition Including NF₃ Chemistry

The Impact of Shallow-Trench-Isolation Mechanical Stress on the Hysteresis Effect of Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effects

Narrow Width and Length Dependence of SiGe and Sallow-Trench-Isolation Stress Induced Defects in 45 nm p-Type Metal–Oxide–Semiconductor Field-Effect Transistors with Strained SiGe Source/Drain

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Anomalous junction leakage current induced by STI dislocations and its impact on dynamic random access memory devices

Cited by 52 publications

References 12 publications

Effect of Fluorine on Characteristics of Shallow Trench Isolation Prepared Using High-Density Plasma Chemical Vapor Deposition Including NF3 Chemistry

Effect of Fluorine on Characteristics of Shallow Trench Isolation Prepared Using High-Density Plasma Chemical Vapor Deposition Including NF3 Chemistry

The Impact of Shallow-Trench-Isolation Mechanical Stress on the Hysteresis Effect of Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effects

Narrow Width and Length Dependence of SiGe and Sallow-Trench-Isolation Stress Induced Defects in 45 nm p-Type Metal–Oxide–Semiconductor Field-Effect Transistors with Strained SiGe Source/Drain

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Effect of Fluorine on Characteristics of Shallow Trench Isolation Prepared Using High-Density Plasma Chemical Vapor Deposition Including NF₃ Chemistry

Effect of Fluorine on Characteristics of Shallow Trench Isolation Prepared Using High-Density Plasma Chemical Vapor Deposition Including NF₃ Chemistry