1969
DOI: 10.1109/tmag.1969.1066480
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Application of orthoferrites to domain-wall devices

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1971
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Cited by 188 publications
(20 citation statements)
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“…Along with fundamental property measurements, research into possible device applications of orthoferrites has also been undertaken by many groups; in particular, in the 1960s and 1970s, the magnetic domain behavior in these materials led to a large number of investigations looking at potential applications for orthoferrites as memory or logic devices [5][6][7], as well as for pattern processing [8]. Although orthoferrites have since been overtaken by ferromagnetic garnets for magnetic bubble devices, interest in orthoferrites again took off in the 1990s, particularly from the viewpoint of their domain wall dynamics, for the velocity of the domain wall motion in orthoferrites (at up to 20 km/s) is reported to be the highest known in any magnetically ordered media [9][10][11].…”
Section: Introductionmentioning
confidence: 99%
“…Along with fundamental property measurements, research into possible device applications of orthoferrites has also been undertaken by many groups; in particular, in the 1960s and 1970s, the magnetic domain behavior in these materials led to a large number of investigations looking at potential applications for orthoferrites as memory or logic devices [5][6][7], as well as for pattern processing [8]. Although orthoferrites have since been overtaken by ferromagnetic garnets for magnetic bubble devices, interest in orthoferrites again took off in the 1990s, particularly from the viewpoint of their domain wall dynamics, for the velocity of the domain wall motion in orthoferrites (at up to 20 km/s) is reported to be the highest known in any magnetically ordered media [9][10][11].…”
Section: Introductionmentioning
confidence: 99%
“…The temperature dependence of magnetization in saturation could be described by M s ͑T͒ =M s ͑0͓͒1−b͑T / T c ͒ leaves a small net magnetic moment and modest Curie temperature. 18,19 In summary, we fabricated the Nd: BiFeO 3 / Bi 2 FeMnO 6 bilayered films on Pt/ Ti/ SiO 2 / Si substrate by PLD method. The film showed good ferroelectric properties with P r and E c values of 54 C / cm 2 and 237 kV/cm, respectively.…”
mentioning
confidence: 99%
“…Since these earliest applications of Kerr microscopy, continuous methodical developments have greatly enhanced the capabilities of the traditional Kerr technique. For Faraday microscopy, which was also applied since the 1950s for transmission experiments mainly on magnetic garnet films [147] and orthoferrites [148], electronic contrast enhancement was not required as the Faraday effect is much stronger than the Kerr effect. For Faraday microscopy, which was also applied since the 1950s for transmission experiments mainly on magnetic garnet films [147] and orthoferrites [148], electronic contrast enhancement was not required as the Faraday effect is much stronger than the Kerr effect.…”
Section: Overviewmentioning
confidence: 99%