1991
DOI: 10.1063/1.105960
|View full text |Cite
|
Sign up to set email alerts
|

Application of oxidation to the structural characterization of SiC epitaxial films

Abstract: Both 3C-SiC and 6H-SiC single-crystal films can be grown on vicinal (0001) 6H-SiC wafers. We have found that oxidation can be a powerful diagnostic process for (1) ‘‘color mapping’’ the 3C and 6H regions of these films, (2) decorating stacking faults in the films, (3) enhancing the decoration of double positioning boundaries, and (4) decorating polishing damage. Contrary to previously published oxidation results, proper oxidation conditions can yield interference colors that provide a definitive map of the pol… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

1
57
0

Year Published

1999
1999
2017
2017

Publication Types

Select...
6
4

Relationship

0
10

Authors

Journals

citations
Cited by 118 publications
(58 citation statements)
references
References 9 publications
1
57
0
Order By: Relevance
“…From this substantial difference in roughness one can expect that the different surfaces affect nucleation and growth in different ways. This was earlier demonstrated in CVD growth of SiC [8,9]. In CVD more rough surfaces usually promote the nucleation of 3C polytype, but generates a higher density of twin boundaries due to uncontrolled nucleation.…”
Section: Heteroepitaxial Growth On Polished Sic Surfacesmentioning
confidence: 86%
“…From this substantial difference in roughness one can expect that the different surfaces affect nucleation and growth in different ways. This was earlier demonstrated in CVD growth of SiC [8,9]. In CVD more rough surfaces usually promote the nucleation of 3C polytype, but generates a higher density of twin boundaries due to uncontrolled nucleation.…”
Section: Heteroepitaxial Growth On Polished Sic Surfacesmentioning
confidence: 86%
“…When this two-dimensional (2D) terrace nucleation occurs during CVD growth of SiC below 1700°C, it is well-documented that the terrace-nucleated islands assume the 3C-SiC stacking structure. [4,6,7,9] Terrace nucleation can be promoted by conditions that reduce the probability that reactant adatoms successfully diffuse to step edges. Such conditions include higher supersaturation, lower growth temperature, the presence of surface defects and/or contamination, and/or longer terrace widths induced by "on-axis" (0001) wafer surface orientation.…”
Section: Introductionmentioning
confidence: 99%
“…A clean surface with reduced number of surface damages is the key to produce defect free homoepitaxial layers [27]. As received SiC samples are known to have polishing-related damages.…”
Section: In-situ Surface Preparationmentioning
confidence: 99%