2013
DOI: 10.1016/j.nimb.2012.12.064
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Application of stencil masks for ion beam lithographic patterning

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Cited by 6 publications
(4 citation statements)
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“…MeV 16 O + bombardment can be used for lithographically patterning Parylene-C and -F in a similar way to that reported for PTFE [5,6] using a broad beam in a parallel exposure process in combination with a stencil mask. The removal rate for Parylene-C and -F was about 25 times smaller than for PTFE.…”
Section: Discussionmentioning
confidence: 92%
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“…MeV 16 O + bombardment can be used for lithographically patterning Parylene-C and -F in a similar way to that reported for PTFE [5,6] using a broad beam in a parallel exposure process in combination with a stencil mask. The removal rate for Parylene-C and -F was about 25 times smaller than for PTFE.…”
Section: Discussionmentioning
confidence: 92%
“…This was done to facilitate measurement of the thickness of material removed using a stylus profilometer from the step height corresponding to the mask edge. A 50 lm PTFE sheet was also used in the study as a reference material because its properties under oxygen ion irradiation were previously studied [5,6]. Masks Irradiation was carried out at the 1.7 MV Tandetron in La Chauxde-Fonds in the ion irradiation end-station using magnetically rastered and neutral trapped 16 O + beams.…”
Section: Methodsmentioning
confidence: 99%
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“…2013). Moreover, mass production of the channel structures is possible by so-called nanoimprint lithography (NIL) (Ansari et al 2006) or aperture/stencil mask MeV ion beam lithography (Brun et al 2013). Additionally, fabrication of PMMA/PMMA/Si microfluidic device using the PPAL technique is a fast development of a microfluidic prototype because of its maskless lithography method (Puttaraksa et al 2013).…”
Section: Introductionmentioning
confidence: 99%