Application of the generalized logistic functions in modeling inversion charge density of MOSFET

Kevkić, Tijana; Stojanović, Vladica; Joksimović, Dušan

doi:10.1007/s10825-018-1137-5

Cited by 5 publications

(2 citation statements)

References 12 publications

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“…Study [48] optimised the quotient using V DS / L representing the electric field. And such a current produced in weak inversion is referred to as the quotient current.…”

Section: Design Methodologymentioning

confidence: 99%

Design and optimisation of high‐efficient class‐F ULP‐PA using envelope tracking supply bias control for long‐range low power wireless local area network IEEE 802.11ah standard using 65 nm CMOS technology

Akhter

Amin

Zia

2022

IET Circuits, Devices & Syst

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This article presents the design and optimisation of a sub‐1 GHz class‐F ultra‐low power (ULP) power amplifier (PA) in 65 nm Complementary Metal Oxide Semiconductor (CMOS) technology. An envelope tracking (ET) supply biasing technique is adopted to improve the efficiency of class‐F PA. The ET consist of a pre‐amp right before the detector in order to enhance the efficiency and save adequate amount of dc power consumption. The PA consists of two cascode cells terminated as class‐F with gate‐to‐drain feedback in order to enhance linearity and limit any harmonic component from the input signal. The novel design consumes a dc power of 3.75 mW, power added efficiency of 37.1%, operating at 915–925 MHz unlicensed band and total saturated output power of 22 dBm including 14 dBm power gain at PA, which qualifies under long‐range low power wireless local area network IEEE 802.11ah standard. The inductor‐less design for ET supply bias reduces the chip layout size to 0.13 mm2 only.

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“…Study [48] optimised the quotient using V DS / L representing the electric field. And such a current produced in weak inversion is referred to as the quotient current.…”

Section: Design Methodologymentioning

confidence: 99%

Design and optimisation of high‐efficient class‐F ULP‐PA using envelope tracking supply bias control for long‐range low power wireless local area network IEEE 802.11ah standard using 65 nm CMOS technology

Akhter

Amin

Zia

2022

IET Circuits, Devices & Syst

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“…(8) leads to deviations of values of ICD obtained from interpolated relation (7) in comparison to results of implicit charge based model. Th ese deviations can be avoided by using following factor [12]:…”

Section: Gl-modification Of Factors ε and Kmentioning

confidence: 99%

Modeling Physical Characteristics of Mosfets with Generalized Logistic Functions

Kevkić¹,

Stojanović²,

Joksimović³

et al. 2019

Proceedings of the International Scientific Conference - Sinteza 2019

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The improved surface potential and charge based MOSFET models have been developed in this work. Compared to the corresponding compact models, the improvement consists in implementation of generalized logistic (GL) functions of the second type in fitting of two important smoothing factors. New GL functional forms of these factors enable the control of continuality of the surface potential (SP), inversion charge density (ICD) and drain current in entire useful region of MOSFET operation. Beside the successful following of the changes in specific technology characteristics of MOSFET devices, the GL smoothing factors also provide continuous and various transitions of the SP and ICD between weak and strong inversion region. Satisfactory matches of the simulated SP, ICD and drain current values with numerical data indicate on suitability of introducing GL functions in MOSFET modeling.

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A Compact Drain Current Model for Graded Channel DMDG Structure with High-k Material

Lalruatfela

Chakrabarti²,

Maity

et al. 2022

Silicon

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Application of the generalized logistic functions in modeling inversion charge density of MOSFET

Cited by 5 publications

References 12 publications

Design and optimisation of high‐efficient class‐F ULP‐PA using envelope tracking supply bias control for long‐range low power wireless local area network IEEE 802.11ah standard using 65 nm CMOS technology

Design and optimisation of high‐efficient class‐F ULP‐PA using envelope tracking supply bias control for long‐range low power wireless local area network IEEE 802.11ah standard using 65 nm CMOS technology

Modeling Physical Characteristics of Mosfets with Generalized Logistic Functions

A Compact Drain Current Model for Graded Channel DMDG Structure with High-k Material

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