Applications for 6H-Silicon Carbide Devices

Palmour, John W.; Edmond, J. A.; Kong, H.S.; CarterJr., C. H.

doi:10.1007/978-3-642-84804-9_42

Cited by 18 publications

(6 citation statements)

References 5 publications

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“…One critical requirement for all ICs, including extreme temperature ICs, is that they function reliably over a designed product lifetime. The emergence of wide bandgap semiconductors has facilitated semiconductor transistor and small IC demonstrations at extreme ambient temperatures of 500 °C or higher over the past two decades (4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15). However, most envisioned applications require reliable operation over long time periods at high temperature, on the order of thousands of hours or more.…”

Section: Introductionmentioning

confidence: 99%

(Invited) Assessment of Durable SiC JFET Technology for +600° to -125° Integrated Circuit Operation

2011

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Electrical characteristics and circuit design considerations for prototype 6H-SiC JFET integrated circuits (ICs) operating over the broad temperature range of -125 °C to +600 °C are described. Strategic implementation of circuits with transistors and resistors in the same 6H-SiC n-channel layer enabled ICs with nearly temperature-independent functionality to be achieved. The frequency performance of the circuits declined at temperatures increasingly below or above room temperature, roughly corresponding to the change in 6H-SiC n-channel resistance arising from incomplete carrier ionization at low temperature and decreased electron mobility at high temperature. In addition to very broad temperature functionality, these simple digital and analog demonstration integrated circuits successfully operated with little change in functional characteristics over the course of thousands of hours at 500 °C before experiencing interconnect-related failures. With appropriate further development, these initial results establish a new technology foundation for realizing durable 500 °C ICs.

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Section: Introductionmentioning

confidence: 99%

(Invited) Assessment of Durable SiC JFET Technology for +600° to -125° Integrated Circuit Operation

2011

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“…Therefore, SiC MOSFETs are feasible power devices for energy-saving and high-temperature operation as compared with silicon (Si) insulated gate bipolar transistors (IGBTs). SiC trench gate MOSFETs (UMOSFETs) are known to reduce on-resistance, compared with planar MOSFETs, owing to their fine cell pitch [1][2][3][4][5][6][7] and high channel mobility on f11 20g and f1 100g planes. [8][9][10][11][12][13][14] One problem with SiC UMOSFETs, however, is the high electric field in the gate oxide at the trench bottom.…”

Section: Introductionmentioning

confidence: 99%

Self-aligned formation of the trench bottom shielding region in 4H-SiC trench gate MOSFET

Kojima

Harada

Kobayashi

et al. 2016

Jpn. J. Appl. Phys.

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To suppress the electric field in the gate oxide in a trench gate MOSFET (UMOSFET) with small cell pitch, we developed a technique to form the p+ region using self-aligned ion implantation under the gate trench. To prevent Al+ injection into the trench sidewalls, conditions of thin oxide layer deposition and Al+ implantation were optimized by process simulation. The resulting SiC trench MOS capacitors exhibited long-term reliability, with no degradation in lifetime by the p+ shielding region, and a specific on-resistance of 9.4 mΩ cm2 with a blocking voltage of 3800 V was achieved in the UMOSFET.

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“…These properties provide promising technological applications into high-temperature and highpower advanced device electronics, as well as blue-lightemitting devices. Considerable improvement in SiC growth processes in recent years has overcome several problems with sample preparation [1][2][3][4], and this has made possible the characterization of a variety of electrical and optical properties of SiC polytypes [5].…”

Section: Introductionmentioning

confidence: 99%

High-temperature effects on the velocity overshoot of hot electrons in 6H- and 3C-SiC

Bezerra

Caetano

Freire

et al. 1999

Semicond. Sci. Technol.

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Lattice temperature effects on the high-field transport transient of electrons in 6H-and 3C-SiC during the subpicosecond regime are studied. The calculations are performed considering a nonparabolic band structure, and the results are obtained through the numerical solution of Boltzmann-like transport equations for the electron drift velocity v and energy ε within the momentum and relaxation time approximations, τ p and τ ε , respectively. It is shown that an increase of the lattice temperature reduces both the electron drift velocity and energy, being even able to preclude a drift velocity overshoot in 6H-and 3C-SiC. For a given electric field, the growth rate of the electron energy decreases strongly when the 6Hand 3C-SiC lattice temperatures are raised.

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Applications for 6H-Silicon Carbide Devices

Cited by 18 publications

References 5 publications

(Invited) Assessment of Durable SiC JFET Technology for +600° to -125° Integrated Circuit Operation

(Invited) Assessment of Durable SiC JFET Technology for +600° to -125° Integrated Circuit Operation

Self-aligned formation of the trench bottom shielding region in 4H-SiC trench gate MOSFET

High-temperature effects on the velocity overshoot of hot electrons in 6H- and 3C-SiC

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