Assignment of surface IR absorption spectra observed in the oxidation reactions: 2H + H2O/Si(1 0 0) and H2O + H/Si(1 0 0)

Hydrogen Terminated Silicon Nanopowders: Gas Phase Synthesis, Oxidation Behaviour, and Si-H Reactivity

“…5d, e and 8e, f. The Si=O double bond vibration appears at 1200 cm −1 and the Si-O-Si single bond at 1039 cm −1 [61]. These characteristic two bands were observed for all samples after heat treatment at 600°C.…”

“…These species were verified by DRIFT spectroscopic investigation (Fig. 5a) by their characteristic IR bands at 2097 and 2082 cm −1 which belong to the symmetric and asymmetric stretching vibrations, respectively [60,61,64]. The temperature for molecular hydrogen desorption from hydrogen terminated silicon surfaces increases with decreasing hydrogen content of the surface species, i.e.…”

“…Diffuse reflection infrared spectra (DRIFT) were recorded ex situ in a Nicolet 510. The peak assignment in the obtained DRIFT spectra was assisted by DFT calculations, as published by Rao et al [60] and Wang et al [61]. …”

Infrared reflection absorption study of water interaction with H-terminated Si(100) surfaces

“…The stable ultra thin surface SiO 2 layers are usually formed using water as an oxidant and etched off by weak acid, HF, which can remove SiO 2 layers at the rate of 100 nm per min (Liu et al 1992;Jones et al 1995). In order to understand the chemical oxidation process by water adsorption, the Si(100) surfaces have been investigated under ultra high vacuum conditions by high resolution electron energy loss spectroscopy (Ibach et al 1982;Ikeda et al 1995;Bitzera et al 1997) and surface infrared spectroscopy (Struck et al 1997;Weldon et al 1997Weldon et al , 2000Chabal and Raghavachari 2002;Wang et al 2002Wang et al , 2004Ranga Rao et al 2004).…”

“…The vibrational spectroscopic investigations of water adsorption on Si(100)-(2 × 1) surfaces have shown the formation of H-Si-Si-OH species on each Si = Si dimer (Ibach et al 1982;Struck et al 1997;Weldon et al 2000;Wang et al 2002). Upon thermal annealing the decomposition of surface hydroxyl groups and the incorporation of oxygen atoms into the Si dimer-bonds as well as Si back-bonds occur in the top layers of Si until the hydrogen desorption temperatures above 650 K. The surface IR spectroscopy has provided impetus to study the mechanistic aspects of oxygen atom insertion into surface Si layers (Mawhinney et al 1997;Ogata et al 1995;Gurevich et al 1998;Chabal and Raghavachari 2002;Ranga Rao et al 2004;Wang et al 2004). This article reports the interaction of water with H-terminated Si(100) surfaces under UHV conditions employing surface sensitive infrared reflection method.…”