1990
DOI: 10.1557/proc-202-513
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Asymmetric Relaxation in Epitaxial Layers of III-V Compounds

Abstract: Relaxation in a 3μm epitaxial layer of GaAsSb on GaAs, a 1μm layer of InGaAs on InP and an InGaAs superlattice on InP has been investigated by double crystal X-ray diffractometry and double crystal X-ray synchrotron topography and found to be asymmetric. The origins of assymetric relaxation are discussed and the sensitivity of diffractometry and topography to the detection of layer relaxation compared.

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“…and started his experimental and theoretical studies of the undercooling of liquid metals, nucleation of phase transformations and, in collaboration with R.E. Hoffman, the accelerated paths or "short circuits" (by analogy with electrotechnique) of diffusion in metals [13,14]. As far as I know, the term "short circuits" has its origin from this time.…”
Section: Quantitative Studies Of Grain Boundary Diffusionmentioning
confidence: 99%
“…and started his experimental and theoretical studies of the undercooling of liquid metals, nucleation of phase transformations and, in collaboration with R.E. Hoffman, the accelerated paths or "short circuits" (by analogy with electrotechnique) of diffusion in metals [13,14]. As far as I know, the term "short circuits" has its origin from this time.…”
Section: Quantitative Studies Of Grain Boundary Diffusionmentioning
confidence: 99%