2012 IEEE International Reliability Physics Symposium (IRPS) 2012
DOI: 10.1109/irps.2012.6241804
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Back-end dielectrics reliability under unipolar and bipolar AC-stress

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Cited by 5 publications
(5 citation statements)
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“…Since the transient leakage current due to the charge trapping is wellmatched by a Power Law on time and so is the trap generation due to stress [5][6], the capacitance drift characteristics for both ELK and HK can be explained reasonably well by the charge trapping/ detrapping processes. …”
Section: Hk Hkmentioning
confidence: 91%
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“…Since the transient leakage current due to the charge trapping is wellmatched by a Power Law on time and so is the trap generation due to stress [5][6], the capacitance drift characteristics for both ELK and HK can be explained reasonably well by the charge trapping/ detrapping processes. …”
Section: Hk Hkmentioning
confidence: 91%
“…Where J is the transient current [5]; N is number of trap charges [6] C is the measured capacitance, and is the VAF of the capacitance drift. The validity of capacitance drift based lifetime model in Eq.…”
Section: E Capacitance Drift Lifetime Modelmentioning
confidence: 99%
“…There have been reports on the influence of pulsed electric fields on dielectric breakdown, but the results are still debatable. [5][6][7][8] Some authors have suggested that bipolar pulses enhance dielectric reliability more so than do DC or unipolar pulse conditions, 5) whereas others have reported the lowest dielectric reliability under bipolar pulse conditions. 6) Still others have concluded that the dielectric lifetime is independent of pulse characteristics (i.e., pulse polarity and frequency).…”
mentioning
confidence: 99%
“…6) Still others have concluded that the dielectric lifetime is independent of pulse characteristics (i.e., pulse polarity and frequency). 7,8) This discrepancy may be caused by uncertainty regarding the exact dielectric breakdown mechanisms. Intrinsic breakdown is the sole breakdown mechanism considered for capacitors used as passive components or gate dielectrics.…”
mentioning
confidence: 99%
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