Abstract:The energy band alignment between HfO2/multilayer (ML)-MoS2 was characterized using high-resolution x-ray photoelectron spectroscopy. The HfO2 was deposited using an atomic layer deposition tool, and ML-MoS2 was grown by chemical vapor deposition. A valence band offset (VBO) of 1.98 eV and a conduction band offset (CBO) of 2.72 eV were obtained for the HfO2/ML-MoS2 interface without any treatment. With CHF3 plasma treatment, a VBO and a CBO across the HfO2/ML-MoS2 interface were found to be 2.47 eV and 2.23 eV… Show more
“…The higher Ga profile in the MoS 2 layer than β-Ga 2 O 3 substrate probably stems from the different ion yield in the different material matrix [27]. Moreover, the tail of Mo in β-Ga 2 O 3 could be ascribed to the diffusion or depth resolution problem, which is caused by primary beam bombardment [28]. Fig.…”
Hybrid heterojunctions based on two-dimensional (2D) and conventional three-dimensional (3D) materials provide a promising way toward nanoelectronic devices with engineered features. In this work, we investigated the band alignment of a mixed-dimensional heterojunction composed of transferred MoS2 on β-Ga2O3(01) with and without nitridation. The conduction and valence band offsets for unnitrided 2D-MoS2/3D-β-Ga2O3 heterojunction were determined to be respectively 0.43 ± 0.1 and 2.87 ± 0.1 eV. For the nitrided heterojunction, the conduction and valence band offsets were deduced to 0.68 ± 0.1 and 2.62 ± 0.1 eV, respectively. The modified band alignment could result from the dipole formed by charge transfer across the heterojunction interface. The effect of nitridation on the band alignments between group III oxides and transition metal dichalcogenides will supply feasible technical routes for designing their heterojunction-based electronic and optoelectronic devices.
“…The higher Ga profile in the MoS 2 layer than β-Ga 2 O 3 substrate probably stems from the different ion yield in the different material matrix [27]. Moreover, the tail of Mo in β-Ga 2 O 3 could be ascribed to the diffusion or depth resolution problem, which is caused by primary beam bombardment [28]. Fig.…”
Hybrid heterojunctions based on two-dimensional (2D) and conventional three-dimensional (3D) materials provide a promising way toward nanoelectronic devices with engineered features. In this work, we investigated the band alignment of a mixed-dimensional heterojunction composed of transferred MoS2 on β-Ga2O3(01) with and without nitridation. The conduction and valence band offsets for unnitrided 2D-MoS2/3D-β-Ga2O3 heterojunction were determined to be respectively 0.43 ± 0.1 and 2.87 ± 0.1 eV. For the nitrided heterojunction, the conduction and valence band offsets were deduced to 0.68 ± 0.1 and 2.62 ± 0.1 eV, respectively. The modified band alignment could result from the dipole formed by charge transfer across the heterojunction interface. The effect of nitridation on the band alignments between group III oxides and transition metal dichalcogenides will supply feasible technical routes for designing their heterojunction-based electronic and optoelectronic devices.
“…Recently, plasma‐assisted doping techniques have emerged as new doping techniques on TMD materials such as MoS 2 and WSe 2 for tuning novel nanoelectronics, optoelectronics, or biosensing devices with significantly enhanced functionalities. In these plasma doping techniques, the top surfaces of MoS 2 are treated with energetic plasmas generated in a reactive ion etcher (RIE) with O 2 , SF 6 , CHF 3 , CF 4 , or Ar . These reactive species in plasma can be effective dopants for 2D materials.…”
Section: Doping Strategiesmentioning
confidence: 99%
“…The plasma‐treated MoS 2 devices exhibited improved device properties due to the plasma induced doping effect on the MoS 2 surface. In addition, O 2 plasma doping enhanced and altered the properties of 1L‐MoS 2 by creating and manipulating defects on the MoS 2 surface, enhancing, or quenching PL, or tailoring the electrical properties of 1L‐MoS 2 . More details on these studies will be presented in the application section.…”
Section: Doping Strategiesmentioning
confidence: 99%
“…As presented in the doping strategy, many dopants have been investigated on MoS 2 for MoS 2 FET device applications including (2‐Fc‐DMBI) 2 (n‐type), 2‐Fc‐DMBI‐H (n‐type), and tris(4‐bromophenyl) ammoniumyl hexachloroantimonate (p‐type), TCNQ (p‐type), F 4 ‐TCNQ (p‐type) and NADH (n‐type), DCE (n‐type), PEI (p‐type), Au NPs (p‐type), DNA (n‐type) and M–DNA (p‐type), ATO (n‐type), OTS (p‐type) and APTES (n‐type), O 2 plasma (n‐type), alkanethiols (p‐type), and CHF 3 plasma (p‐type) . Significantly, the recent discoveries regarding the high potential of the newest doping techniques such as plasma doping, and DNA doping, would surely be of great interest to the 2D material community. To date, there are three main research focuses in developing next‐generation 2D FET devices: i) ultrahigh on/off current ratio, ii) widening of bandgap, and iii) high mobility.…”
Section: Industrial Applications Of Doped Mos2mentioning
Owing to their excellent physical properties, atomically thin layers of molybdenum disulfide (MoS ) have recently attracted much attention due to their nonzero-gap property, exceptionally high electrical conductivity, good thermal stability, and excellent mechanical strength, etc. MoS -based devices exhibit great potential for applications in optoelectronics and energy harvesting. Here, a comprehensive review of various doping strategies is presented, including wet doping and dry doping of atomically crystalline MoS thin layers, and the progress made so far for their doping-based prospective applications is also discussed. Finally, several significant research issues for the prospects of doped-MoS in industry, as a guide for 2D material community, are also provided.
“…Two characteristic peaks of 2 1 E g (382.28 cm −1 ) and A 1g (406.02 cm −1 ) for all samples are mainly observed, they correspond to the inplane vibration of Mo and S atoms and the outofplane vibration of S atoms, respectively. [32,33] In addition, the frequency difference (∆k) between the A 1g and 2 1 E g modes can be used to estimate the number of layers or thickness of the MoS 2 . [34][35] The difference in the Raman characteristic peaks of the MoS 2 film on the top and bottom of the PSS is not observed and the ∆k is about 23.74 cm −1 , which may be less affected by the nanocone, or the difference in thermal expan sion coefficient is reduced, [26] which indicates that the MoS 2 film on the PSS is about 4-5 layers with excellent uniformity.…”
The introduction of patterned sapphire substrates (PSS) has been regarded as an effective method to improve the photoelectric performance of 2D layered materials in recent years. Molybdenum disulfide (MoS2), an intriguing transition metal 2D materials with splendid photoresponse owing to a direct‐indirect bandgap transition at monolayer, shows promising optoelectronics applications. Here, a large‐scale, continuous multilayer MoS2 film is prepared on a SiO2/Si substrate and transferred to flat sapphire substrate and PSS, respectively. An enhanced dynamic distribution of local electric field and concentrated photon excitons across the interface between MoS2 and patterned sapphire substrates are revealed by the finite‐difference time‐domain simulation. The photoelectric performance of the MoS2/PSS photodetector is improved under the three lasers of 365, 460, and 660 nm. Under the 365 nm laser, the photocurrent increased by 3 times, noise equivalent power (NEP) decreases to 1.77 × 10−14 W/Hz1/2 and specific detectivity (D*) increases to 1.2 × 1010 Jones. Meanwhile, the responsivity is increased by 7 times at 460 nm, and the response time of the MoS2/PSS photodetector is also shortened under three wavelengths. The work demonstrates an effective method for enhancing the optical properties of photodetectors and enabling simultaneous detection of broad‐spectrum emissions.
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