Band Structure of Doped Bismuth Using the Shubnikov—de Haas Effect

Antcliffe, G. A.; Bate, R. T.

doi:10.1103/physrev.160.531

Cited by 33 publications

(7 citation statements)

References 20 publications

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“…T a b l e 2 Values of l/tdr contribution of the neutron radiation defects to the inverse scattering time for different tellurium concentrations *)The ratios m*/m, are taken from results of Anticliffe and Bate [8].…”

Section: Model and Resultsmentioning

confidence: 99%

Neutron radiation defects in bismuth and tellurium-doped bismuth

Quelard

Lesueur

1976

Phys. Stat. Sol. (a)

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Section: Model and Resultsmentioning

confidence: 99%

Neutron radiation defects in bismuth and tellurium-doped bismuth

Quelard

Lesueur

1976

Phys. Stat. Sol. (a)

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“…Further, provided that the hole concentration is zero, each additional Te atom produces one conduction electron [17, 191. Increasing bhe Te concentration causes a large drop in mobility not only because of increased scattering but also because the effective mass increases significantly. At the highest doping levels (0.06°/0) investigated in [18] the Fermi energy becomes large (= 90 meV) and other electron bands may be coming into play. I n the light of these features it is extremely surprising that the strength of the T 2 term remains unaltered on addition of Te into Bi.…”

Section: Bi-sbmentioning

confidence: 98%

“…It seems useful to recall the following facts regarding Bi-Te alloys. It has been shown [18] that except for very lightly doped samples (Te conc. & 50 ppm) the hole concentration is negligible.…”

Section: Bi-sbmentioning

confidence: 99%

Low-temperature resistivity of Bi and its alloys

Chopra¹,

Ray²,

Bhagat³

1971

Phys. Stat. Sol. (a)

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The electrical resistivity of pure Bi, Bi‐Sb, Bi‐Pb, and Bi‐Te alloys at 1.3 < T < 77°K has been measured. For all the systems the ideal resistivity shows a T2‐dependence at low temperatures. However, there is a characteristic difference between the compensated (Bi, Bi‐Sb) and the uncompensated materials (Bi‐Pb, Bi‐Te). Several mechanisms, which may account for the data, are discussed.

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“…In the NEW model. the relation between the energy and momentum of an electron is (Cohen 1961) From the experimental results (Antcliffe andBate 1967. Dinger andLawson 1970).…”

Section: Formal Theorymentioning

confidence: 99%

Investigation of Body Bias Dependence of Gate-Induced Drain Leakage Current for Body-Tied Fin Field Effect Transistor

Yoshida

Lee

Jung

et al. 2008

jjap

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The effect of the Cohen nonellipsoidal nonparabolic (NENP) band structure on the propagation of ultrasound in bismuth in the presence of a DC magnetic field is investigated by using a quantum-mechanical treatment which is valid at high frequencies and in strong magnetic fields. It is found that the absorption coefficient and sound velocity for ultrasound propagating parallel to the DC magnetic field depend upon the magnetic field and sound frequency. The dependence on magnetic field arises from the nonlinear effect of the energy bands owing to the NENP model for bismuth. while the dependence on sound frequency is due to the electron-phonon interaction in bismuth. Some oscillations and discontinuities in the absorption coefficient and change in the sound velocity appear in the region of strong magnetic fields and high frequencies. However, the oscillations will be diminished at sound frequencies above o = 1 x 10" rads;' A brief discussion about the spin-splitting effect in bismuth is made. It shows that the spin-splitting energy cannot be neglected in the region of strong magnetic fields.

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Band Structure of Doped Bismuth Using the Shubnikov—de Haas Effect

Cited by 33 publications

References 20 publications

Neutron radiation defects in bismuth and tellurium-doped bismuth

Neutron radiation defects in bismuth and tellurium-doped bismuth

Low-temperature resistivity of Bi and its alloys

Investigation of Body Bias Dependence of Gate-Induced Drain Leakage Current for Body-Tied Fin Field Effect Transistor

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