Bandgap modulated phosphorene based gate drain underlap double-gate TFET

Abdullah-Al-Kaiser, Md.; Paul, Dip Joti; Khosru, Quazi D. M.

doi:10.1063/1.5049611

Cited by 4 publications

(1 citation statement)

References 37 publications

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“…Utilizing the layer-controlled bandgap of a 2D material could be an effective way to improve the I on of a TFET because of the narrowing tunneling barrier by layer-controlling. [6,[23][24][25] Notably, the bandgap of 2D SnS is layer-controlled, which gives a hint to take advantage of the layer-controlled bandgap.…”

Section: Introductionmentioning

confidence: 99%

Layer‐Controlled Low‐Power Tunneling Transistors Based on SnS Homojunction

Liang

Liu

et al. 2021

Advcd Theory and Sims

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Utilizing the layer‐controlled bandgap of a 2D material is an effective way of improving a tunneling field‐effect transistor (TFET) device's performance because of the narrowing tunneling barrier. An ab initio quantum transport method is used to study the SnS homojunction TFETs at a sub‐10 nm scale through layer controlling. The optimal SnS homojunction TFET has a bilayer SnS as the source electrode, which possesses a low leakage current like the ML SnS TFET and a high on‐state current like the BL SnS TFET. The low SSave_4dec (subthreshold swing over four decades of the drain currents) of ≈47–48 mV dec−1 and I60 (drain current at 60 mV dec−1) of ≈1.1–1.2 µA µm−1 implies the BL source SnS TFET, a fast low‐power (LP) device. The optimal BL source SnS TFET with a gate length of Lg = 10 nm exceeds the LP device requirement of the International Technology Roadmap for Semiconductors (ITRS) (2013 version), and its negative capacitance counterparts can exceed the ITRS 2028 target for LP device at Lg = 5 nm.

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Section: Introductionmentioning

confidence: 99%

Layer‐Controlled Low‐Power Tunneling Transistors Based on SnS Homojunction

Liang

Liu

et al. 2021

Advcd Theory and Sims

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Device simulation of GeSe homojunction and vdW GeSe/GeTe heterojunction TFETs for high-performance application

Wang

et al. 2022

J Comput Electron

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Compared with a 2D homogeneous channel, the introduction of a 2D/2D homojunction or heterojunction is a promising method to promote the performance of a TFET mainly by controlling the tunneling barrier. We simulate the 10-nm-Lg double-gated GeSe homojunction TFETs and vdW GeSe/GeTe heterojunction TFETs using the ab initio quantum transport calculations. Two constructions are considered for both the homojunction and heterojunction TFETs by placing the BL GeSe and vdW GeSe/GeTe heterojunction as the source or drain while the channel and the remaining drain or source use ML GeSe. The on-state current (Ion) of the optimal n-type BL-ML GeSe source homojunction TFET and the optimal p-type vdW GeSe/GeTe drain heterojunction TFET are 2320 and 2387 μA μm -1 , respectively, which are 50% and 64% larger than Ion of the ML GeSe homogeneous TFET. Inspiringly, the device performances (Ion, intrinsic delay time τ, and power delay product PDP) of both the optimal ntype GeSe homojunction and p-type vdW GeSe/GeTe heterojunction TFETs meet the requirement of the International Roadmap for Device and Systems high-performance device for the year of 2034 (2020 version).

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Recent Developments in Black Phosphorous Transistors: A Review

Pon

Bhattacharyya

Rathinam

2021

J. Electron. Mater.

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Two-dimensional (2D) materials like graphene, phosphorene, germanene, silicene, and transition metal dichalcogenides have attracted intense research attention because of their rich physics and potential for integration into next-generation electronic devices. These materials offer superior electrostatic control to their bulk counterparts, which makes them fascinating for device fabrication. After graphene and MoS 2 , the most intensively explored 2D material is black phosphorus (BP). During the past half-decade, BP has notably achieved excellent performance when included in transistors. This review paper aims to throw some light on BP properties and their performance in a field effect transistor device. The state-of-the-art BP transistors are reviewed, and a balanced view of both the benefits and drawbacks is provided. Keywords 2D material • black phosphorous • phosphorene • TCAD • DFT • MOSFET • TFET* Ramesh Rathinam

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Bandgap modulated phosphorene based gate drain underlap double-gate TFET

Cited by 4 publications

References 37 publications

Layer‐Controlled Low‐Power Tunneling Transistors Based on SnS Homojunction

Layer‐Controlled Low‐Power Tunneling Transistors Based on SnS Homojunction

Device simulation of GeSe homojunction and vdW GeSe/GeTe heterojunction TFETs for high-performance application

Recent Developments in Black Phosphorous Transistors: A Review

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