Basic mechanisms involved in the Smart-Cut® process

Aspar, B.; Bruel, M.; Moriceau, H.; Maleville, Christophe; Poumeyrol, T.; Papon, A.M.; Claverie, A.; Benassayag, Gérard; Auberton‐Hervé, A.J.; Barge, T.

doi:10.1016/s0167-9317(97)00055-5

Cited by 144 publications

(78 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…We obtained the same activation energy. The E a of (2.3 ± 0.1) eV found with the classical splitting kinetics is generally related to H-migration in the presence of gettering centers [8], or, according to some results [9], the rupture of the remaining Si-Si bonds in the implanted region. Our results tend to prove that H migration towards microcraks is the rate limiting step in the splitting kinetics.…”

Section: Kinetics Of H 2 Formationmentioning

confidence: 86%

Time Dependence Study Of Hydrogen-Induced Defects In Silicon During Thermal Anneals

Personnic

Tauzin

Bourdelle

et al. 2006

AIP Conference Proceedings

Self Cite

View full text Add to dashboard Cite

Abstract. Hydrogen implantation in silicon and subsequent thermal anneal result in the formation of a wide range of point and extended defects. In particular, characteristic two-dimensional extended defects, i.e. platelets, are formed. The growth of these defects during thermal anneal, related to H migration, induces the development of micro-cracks in Si. In this paper, a time dependence study of H defects during isothermal anneals is performed using SIMS, FTIR and TEM techniques. We calculate the kinetics of H 2 formation based on SIMS depth profiling and FTIR measurements. We show that the splitting is determined by H migration and rearrangement of hydrogenated defects.

show abstract

Section: Kinetics Of H 2 Formationmentioning

confidence: 86%

Time Dependence Study Of Hydrogen-Induced Defects In Silicon During Thermal Anneals

Personnic

Tauzin

Bourdelle

et al. 2006

AIP Conference Proceedings

Self Cite

View full text Add to dashboard Cite

show abstract

“…2͑c͒͑2͔͒, during STA, hydrogen diffuses along the defect lines and forms large gas pockets ͑diameterϾ 5 nm͒ at the expense of smaller ones. 16,17 The internal pressure in large gas pockets increases and leads to the extension of small cracks into microcracks.…”

Section: Rms Roughness ͑Nm͒ Scan Areamentioning

confidence: 99%

Low temperature exfoliation process in hydrogen-implanted germanium layers

Ferain

Byun

Colinge

et al. 2010

Journal of Applied Physics

View full text Add to dashboard Cite

The feasibility of transferring hydrogen-implanted germanium to silicon with a reduced thermal budget is demonstrated. Germanium samples were implanted with a splitting dose of 5×1016 H2+ cm−2 at 180 keV and a two-step anneal was performed. Surface roughness and x-ray diffraction pattern measurements, combined with cross-sectional TEM analysis of hydrogen-implanted germanium samples were carried out in order to understand the exfoliation mechanism as a function of the thermal budget. It is shown that the first anneal performed at low temperature (≤150 °C for 22 h) enhances the nucleation of hydrogen platelets significantly. The second anneal is performed at 300 °C for 5 min and is shown to complete the exfoliation process by triggering the formation of extended platelets. Two key results are highlighted: (i) in a reduced thermal budget approach, the transfer of hydrogen-implanted germanium is found to follow a mechanism similar to the transfer of hydrogen-implanted InP and GaAs, (ii) such a low thermal budget (<300 °C) is found to be suitable for directly bonded heterogeneous substrates, such as germanium bonded to silicon, where different thermal expansion coefficients are involved.

show abstract

“…Various methods are used to fabricate Silicon-On-Insulator wafers: hetero-epitaxy, Separation by Implantation of Oxygen (SIMOX) [3,4] and Smart Cut TM technology [5,6].…”

Section: Soi Fabrication Techniquesmentioning

confidence: 99%

Structural inhomogeneity in silicon-on-insulator probed with coherent X-ray diffraction

Shi¹,

Xiong

Huang

et al. 2010

Zeitschrift Für Kristallographie

View full text Add to dashboard Cite

Abstract. We report our research on X-ray micro-beam diffraction and coherent X-ray diffractive imaging techniques to study structural inhomogeneities in Silicon-On-Insulator continuous plain wafers. Inhomogeneities were measured quantitatively and attributed to limitations of the manufacturing process. 3-dimensional image reconstructions were performed by using our Error-Reduction and Hybrid-Input-Output iterative algorithms. These revealed images of the focussed X-ray beam passing through the active layer of the wafer.

show abstract

Basic mechanisms involved in the Smart-Cut® process

Cited by 144 publications

References 11 publications

Time Dependence Study Of Hydrogen-Induced Defects In Silicon During Thermal Anneals

Time Dependence Study Of Hydrogen-Induced Defects In Silicon During Thermal Anneals

Low temperature exfoliation process in hydrogen-implanted germanium layers

Structural inhomogeneity in silicon-on-insulator probed with coherent X-ray diffraction

Contact Info

Product

Resources

About