2011
DOI: 10.1109/jstqe.2011.2125780
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Beam Properties of Visible Proton-Implanted Photonic Crystal VCSELs

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Cited by 14 publications
(9 citation statements)
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“…The spectral linewidth is 0.1 nm, which is near the spectrometer resolution. The Gaussian far-field profile exhibits a 10°beam divergence, consistent with past reports [18]- [20]. Comparison of the lasing emission in Fig.…”
Section: Experimental Characterizationsupporting
confidence: 89%
See 1 more Smart Citation
“…The spectral linewidth is 0.1 nm, which is near the spectrometer resolution. The Gaussian far-field profile exhibits a 10°beam divergence, consistent with past reports [18]- [20]. Comparison of the lasing emission in Fig.…”
Section: Experimental Characterizationsupporting
confidence: 89%
“…The optical loss arising from the photonic crystal surrounding such a defect cavity contributes to suppression of higher order modes [16]. The etched photonic crystal can reduce the beam divergence to less than 20°, a typical value for a similar sized oxide-confined VCSEL, but the beam divergence is sensitive to the etch depth of the photonic crystal [18]- [20].…”
mentioning
confidence: 99%
“…Vertical-cavity surface-emitting laser (VCSEL) diodes, first presented in 1979 (1), emit a coherent optical beam vertically from the device top surface and offer a number of advantages compared to conventional edge-emitting lasers, including lower threshold (2), circular and low-divergence output beam (3), single longitudinal mode emission (4), longer lifetime (5), and easy production of dense twodimensional (2D) arrays (6)(7)(8)(9)(10)(11). Commercial VCSELs are fabricated on GaAs and InP substrates (12,13), which emit light mostly in the near-infrared wavelengths (14,15).…”
Section: Introductionmentioning
confidence: 99%
“…The shape and size of the relief feature is defined using conventional UV lithography techniques. It should be mentioned that the non-circular relief features are defined in the shape of an ellipse, where it is oriented along the crystal axes of [1][2][3][4][5][6][7][8][9][10] and [110]. Figure 1.b shows an SEM image from the top surface of a VCSEL, in which a shallow-etched surface relief feature with both elliptical and circular geometries is shown.…”
Section: Epitaxial Growth and Device Fabricationmentioning
confidence: 99%
“…In other words, the optical aperture is small enough (typically smaller than 4µm) only to encompass the fundamental mode, while the higher order transverse modes simply cannot be stimulated. However, the maximum achievable singlemode output power in these devices is typically limited to 5mW or even less [9]. Additionally, the process variability in manufacturing VCSELs with small aperture, where a smaller-than-target aperture size could lead to notable increase in lasing threshold current or a larger-than-target aperture size could give rise to stimulation of the higher order modes, could increase the yield loss for large-scale fabrication of these single-mode VCSELs.…”
Section: Introductionmentioning
confidence: 99%