Behavior of hot hole stressedSiO2/Si interface at elevated temperature

Journal of Applied Physics

Zhao

Groeseneken

et al. 2001

Self Cite

Articles you may be interested inHybrid titanium-aluminum oxide layer as alternative high-k gate dielectric for the next generation of complementary metal-oxide-semiconductor devices Appl. Phys. Lett. 86, 042904 (2005); 10.1063/1.1856137 Evaluation of nickel and molybdenum silicides for dual gate complementary metal-oxide semiconductor application Appl. Phys. Lett. 86, 022105 (2005); 10.1063/1.1849850Secondary ion mass spectrometry characterization of source/drain junctions for strained silicon channel metal-oxide-semiconductor field-effect transistors This article investigates the H 2 -anneal induced positive charge generation in the gate oxide of metal-oxide-semiconductor field-effect transistors fabricated by a submicron complementary metal-oxide-semiconductor process. A significant number (ϳ10 12 cm Ϫ2 ) of fixed and mobile positive charges are generated at 450°C. Properties ͑reactivity, electrical and thermal stability͒ of these positive charges are compared with the positive charges observed in the buried oxide of silicon-on-insulator devices. The differences in these two are investigated, in terms of their transportation time across the oxide, uniformity and sources of hydrogen. Attention is paid to the role played by boron in the generation and the possible connection between the positive species observed here and the defects responsible for the positive bias temperature instability. Efforts are made to explain the difference in reactivity between the H 2 -anneal induced positive species and the hydrogenous species released by irradiation or electrical stresses.

Section: Introductionmentioning

confidence: 99%

Hydrogen induced positive charge generation in gate oxides

Journal of Applied Physics

Zhao

Groeseneken

et al. 2001

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“…The test follows the standard stress-and-sense procedure [26], [27], and a typical V g waveform is shown in Fig. 1(b).…”

Section: Devices and Experimentsmentioning

confidence: 99%

Characterization of Negative-Bias Temperature Instability of Ge MOSFETs With <inline-formula> <tex-math notation="TeX">${\rm GeO}_{2}/{\rm Al}_{2}{\rm O}_{3}$ </tex-math></inline-formula> Stack

IEEE Trans. Electron Devices

et al. 2014

Ge is a candidate for replacing Si, especially for pMOSFETs, because of its high hole mobility. For Si-pMOSFETs, negative-bias temperature instabilities (NBTI) limit their lifetime. There is little information available for the NBTI of Ge-pMOSFETs with Ge/GeO 2 /Al 2 O 3 stack. The objective of this paper is to provide this information and compare the NBTI of Ge-and Si-pMOSFETs. New findings include: 1) the time exponent varies with stress biases/field when measured by either the conventional slow dc or pulse I-V technique, making the conventional V g -accelerated method for predicting the lifetime of Si-pMOSFETs inapplicable to Ge-pMOSFETs used in this paper; 2) the NBTI is dominated by positive charges (PCs) in dielectric, rather than generated interface states; 3) the PC in Ge/GeO 2 /Al 2 O 3 can be fully annealed at 150°C; and 4) the defect losses reported for Si sample were not observed. For the first time, we report that the PCs in oxides on Ge and Si behave differently, and to explain the difference, an energy-switching model is proposed for hole traps in Ge-MOSEFTs: their energy levels have a spread below the edge of valence band, i.e., E v , when neutral, lift well above E v after charging, and return below E v following neutralization.Index Terms-Al 2 O 3 , degradations, Ge MOSFETs, Ge/GeO 2 , high-k on Ge, hole traps, lifetime, negative-bias temperature instability (NBTI), positive charges (PCs).

“…Throughout these conversions, the total number of defects, which is the sum of precursors and interface states, remains constant. Recent work, [14][15][16][17][18] however, shows that there are cases where additional defects are generated.…”

Section: Introductionmentioning

confidence: 99%

“…[15][16][17][18] The stress can be the substrate hot hole injection, 15 Fowler-Nordheim injection, 16,17 and plasma charging. 18 When the stress is resumed, these generated precursors enhance the device degradation significantly and, thus, reduce device lifetime.…”

Section: Introductionmentioning

confidence: 99%

Mechanism for the generation of interface state precursors

Journal of Applied Physics

Sii

Degraeve

et al. 2000

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Interface states formation in a localized charge trapping nonvolatile memory deviceThe generation of interface states plays an important role in the degradation of submicrometer devices. Previous attention was mainly focused on the conversion between interface states and their precursors. The total number of defects, which is the sum of precursors and interface states, is often implicitly assumed to be constant. However, recent work indicates that this number could be increased. The mechanism for the generation of new precursors is still not clear and the objective of this article is to throw light on it. The work is concentrated on investigating the roles played by hydrogen and the holes trapped in the oxide. It is found that, although the H 2 or the trapped hole alone does not create precursors, their simultaneous presence causes the damage. The hydrogen species can be either supplied externally or released within the device. The generation is thermally activated, but saturates at a defect-limited level. The generation kinetics is studied and the rate limiting mechanism is discussed. Efforts have been made to unveil the differences between the generated precursors and those originally in the device, in terms of their existing forms, thermal stability, annealing behavior, dependence on the hole fluence, and the hydrogen involvement. It is concluded that they originate from different defects.