Behaviour of the fractional glow technique with first-order detrapping processes, traps distributed in energy or frequency factor

Rudlof, G.; Becherer, Johannes; Glaefeke, H.

doi:10.1002/pssa.2210490253

Cited by 27 publications

(9 citation statements)

References 8 publications

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“…For this, it suffices to divide the continuous distribution into a large number of small intervals, calculate the glow curve for each of these intervals, and add these glow curves to obtain the curve for the entire trap distribution. It was shown by Rudlof et al 44 and Hornyak and Chen, 21 that the results of such a numerical approach agree very well with the analytical expression.…”

Section: Continuous Trap Depth Distributionssupporting

confidence: 52%

Revealing trap depth distributions in persistent phosphors

et al. 2013

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Persistent luminescence or afterglow is caused by a gradual release of charge carriers from trapping centers. The energy needed to release these charge carriers is determined by the trap depths. Knowledge of these trap depths is therefore crucial in the understanding of the persistent luminescence mechanism. Unfortunately, the trap depths in persistent phosphors are often difficult to evaluate in an accurate and reliable way. The existing analysis methods are mostly based on single experiments, or they ignore the possibility of a continuous distribution of trap depths. We present a procedure to accurately probe the activation energies, even in the presence of a continuous distribution of energy levels. By performing a series of thermoluminescence experiments with varying excitation duration and at varying excitation temperature, and employing the initial rise analysis method, the depth and shape of such a distribution can be estimated. As an example, we investigated the trap system in the violet persistent phosphor CaAl 2 O 4 :Eu,Nd, and show that it consists of a Gaussian-shaped distribution of trap depths. The maximal density of traps lies in the region around 0.9 eV, but the distribution extends to 0.7 eV on the shallow side and 1.2 eV on the deep side. The described procedure can be used to obtain a clear view of the trap system in other persistent phosphors as well. This can lead to a better understanding of the nature of these trapping centers, and the role they play in the persistent luminescent mechanism.

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Section: Continuous Trap Depth Distributionssupporting

confidence: 52%

Revealing trap depth distributions in persistent phosphors

et al. 2013

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“…Ideally, in these three cases the resulting curve should be a) a straight line, b) a step-like curve, c) a monotonically increasing curve. Analysis of computer-produced peaks, however, has shown that a continuous distribution may form a step-like function [46] while discrete activation energies may produce a rather smeared step which looks like a monotonic function [47]. Thus, the various options should be tested by the BF program.…”

Section: Correlation Of Ir and Bf Resultsmentioning

confidence: 99%

“…This was explained by ascribing the 82 "C peak to traps with a constant activation energy (0.73eV) and a narrow distribution of frequency factors. In such a case the IR method gives the correct E [46]. The BF, however, should give a lower value of E due to the widening of the peak by the distributed S. By using Chen's halfwidth method a rectangular distribution with S = (4.12 to 6.20) x 10' s -' was proposed.…”

Section: Correlation Of Ir and Bf Resultsmentioning

confidence: 99%

Kinetic Analysis of Thermoluminescence

Kirsh

1992

Phys. Stat. Sol. (a)

110

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“…In order to evaluate the activation energies, the "initial rise" method was applied to samples after a pre-dose of 1.2 kGy and a similar test dose. For the initial rise mea- [7] that applying the initial-rise method to such a distribution results in a slopiiig step in the spectrum of activation energies, similar to the one which appears in the upper part of Fig. 4 near 150 "C. Fig.…”

Section: Curves a And B Inmentioning

confidence: 65%

Kinetic Analysis of the New Sensitization Effect in the TL of Silica Optical Fibres

Kirsh

Townsend

1989

Phys. Stat. Sol. (a)

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The kinetic parameters of the thermoluminescence induced by X‐irradiation in Ge‐silica optical fibres doped with Nd, are investigated. Initially the emission spectrum consists mainly of a band near 400 nm. The combined effect of irradiation and heating generates a new band, near 520 nm. The kinetic analysis shows that besides the broad distribution of activation energies which is typical of the amorphous silica, several monocnergetic traps are active as well. The shallower trap can be linked to the well known “110 °C peak” of quartz. It is suggested that the recombination of electrons with O 2− hole centres produce the 400 nm emission while the 520 nm band is associated with a Nd3+ hole centre. Ge4+ is assumed to be the dominant electron trap.

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Behaviour of the fractional glow technique with first-order detrapping processes, traps distributed in energy or frequency factor

Cited by 27 publications

References 8 publications

Revealing trap depth distributions in persistent phosphors

Revealing trap depth distributions in persistent phosphors

Kinetic Analysis of Thermoluminescence

Kinetic Analysis of the New Sensitization Effect in the TL of Silica Optical Fibres

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