2002
DOI: 10.1016/s0257-8972(02)00396-1
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Bias voltage dependence of properties for ZnO:Al films deposited on flexible substrate

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Cited by 37 publications
(21 citation statements)
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“…This indicates that all of the obtained films were polycrystalline with the hexagonal wurtzite structure and had a preferred orientation with the c-axis perpendicular to the substrates. This result is the same with the structure of ZnO:Al films [14,15]. The c-axis orientation in ZnO:Ga films can be understood by the ''survival of the fastest'' model proposed by Drift [16].…”
Section: Resultssupporting
confidence: 78%
“…This indicates that all of the obtained films were polycrystalline with the hexagonal wurtzite structure and had a preferred orientation with the c-axis perpendicular to the substrates. This result is the same with the structure of ZnO:Al films [14,15]. The c-axis orientation in ZnO:Ga films can be understood by the ''survival of the fastest'' model proposed by Drift [16].…”
Section: Resultssupporting
confidence: 78%
“…Das. This is due to the increased bias voltage attracting the ions to bombard the surface to provide extra energy for the growing films, resulting in a higher deposition rate [12]. Further increase of the substrate bias, the deposition rate decreases.…”
Section: Experimental Processmentioning
confidence: 99%
“…It was reported that the bombardment of positive ions of argon with appropriate kinetic energy assisted the crystallization process of ZnO films; however, crystallize size decreased as the P sub further increased [16].…”
Section: Microstructure Of Zno Filmsmentioning
confidence: 99%
“…It is known that the substrate bias is an effective way to enhance the energy of positive ion to the growing surface due to negative self-bias of the substrate [15,16]. Therefore, the energy of positive ion could be controlled by the rf-power to the substrate.…”
Section: Introductionmentioning
confidence: 99%