Bipolar Resistive Switching Characteristics in Flexible Pt/MZT/Al Memory and Ni/NbO<sub>2</sub>/Ni Selector Structure

Lee, Ke-Jing; Chang, Yu‐Chi; Lee, Cheng-Jung; Wang, Liwen; Wang, Yeong-Her

doi:10.1109/jeds.2018.2801278

Cited by 14 publications

(5 citation statements)

References 38 publications

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“…The experiment step was similar with our previous work [ 15 , 16 , 17 , 18 ], in which the SZO, BZO, and MZO thin films are amorphous. Figure 3 shows the elements present in each sample are clearly identified.…”

Section: Resultsmentioning

confidence: 88%

Effect of Alkaline Earth Metal on AZrOx (A = Mg, Sr, Ba) Memory Application

Lee

Wang

2021

Gels

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Zr can be stabilized by the element selected, such as Mg-stabilized Zr (MSZ), thus providing MSZ thin films with potentially wide applications and outstanding properties. This work employed the element from alkaline earth metal stabilized Zr to investigate the electrical properties of sol–gel AZrOx (A = alkaline earth metal; Mg, Sr, Ba) as dielectric layer in metal-insulator–metal resistive random-access memory devices. In addition, the Hume–Rothery rule was used to calculate the different atomic radii of elements. The results show that the hydrolyzed particles, surface roughness, and density of oxygen vacancy decreased with decreased difference in atomic radius between Zr and alkaline earth metal. The MgZrOx (MZO) thin film has fewer particles, smoother surface, and less density of oxygen vacancy than the SrZrOx (SZO) and BaZrOx (BZO) thin films, leading to the lower high resistance state (HRS) current and higher ON/OFF ratio. Thus, a suitable element selection for the sol–gel AZrOx memory devices is helpful for reducing the HRS current and improving the ON/OFF ratio. These results were obtained possibly because Mg has a similar atomic radius as Zr and the MgOx-stabilized ZrOx.

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Section: Resultsmentioning

confidence: 88%

Effect of Alkaline Earth Metal on AZrOx (A = Mg, Sr, Ba) Memory Application

Lee

Wang

2021

Gels

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“…However, these materials can hardly be applied to flexible electronics because of their high-temperature fabrication. [8][9][10][11][12] In addition, TS memristors based on flexible materials, such as MoS 2 and organic compounds, have difficulty achieving high switching speeds (microseconds or even milliseconds). 13,14 In recent years, some studies have reported artificial neurons based on flexible TS memristors with microsecond-switching speeds, 15 limiting the sensitivities of artificial neurons in flexible electronics.…”

Section: Introductionmentioning

confidence: 99%

Halide perovskite memristor with ultra-high-speed and robust flexibility for artificial neuron applications

et al. 2022

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“…Resistive random access memory (RRAM) is one of the strong candidates of next-generation nonvolatile memories (NVM) due to its simple metal/insulator/metal structure, low power consumption, fast switching speed, simple fabrication, and high scalability [1][2][3]. Resistive switching characteristics have been demonstrated in a variety of materials, including binary metal oxides, chalcogenide materials, and perovskite oxides.…”

Section: Introductionmentioning

confidence: 99%

Resistive Switching Behavior of Magnesium Zirconia Nickel Nanorods

Lee

Wang

et al. 2020

Materials

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To effectively improve the uniformity of switching behavior in resistive switching devices, this study developed magnesium zirconia nickel (MZN) nanorods grown on ITO electrodes through hydrothermal method. The field emission scanning electron microscope image shows the NR formation. Al/MZN NR/ITO structure exhibits forming-free and bipolar resistive switching behaviors. MZN NRs have relatively higher ON/OFF ratio and better uniformity compared with MZN thin film. The superior properties of MZN NRs can be attributed to its distinct geometry, which leads to the formation of straight and extensible conducting filaments along the direction of MZN NR. The results suggest the possibility of developing sol–gel NR-based resistive memory devices.

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Bipolar Resistive Switching Characteristics in Flexible Pt/MZT/Al Memory and Ni/NbO₂/Ni Selector Structure

Cited by 14 publications

References 38 publications

Effect of Alkaline Earth Metal on AZrOx (A = Mg, Sr, Ba) Memory Application

Effect of Alkaline Earth Metal on AZrOx (A = Mg, Sr, Ba) Memory Application

Halide perovskite memristor with ultra-high-speed and robust flexibility for artificial neuron applications

Resistive Switching Behavior of Magnesium Zirconia Nickel Nanorods

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Bipolar Resistive Switching Characteristics in Flexible Pt/MZT/Al Memory and Ni/NbO2/Ni Selector Structure

Cited by 14 publications

References 38 publications

Effect of Alkaline Earth Metal on AZrOx (A = Mg, Sr, Ba) Memory Application

Effect of Alkaline Earth Metal on AZrOx (A = Mg, Sr, Ba) Memory Application

Halide perovskite memristor with ultra-high-speed and robust flexibility for artificial neuron applications

Resistive Switching Behavior of Magnesium Zirconia Nickel Nanorods

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Bipolar Resistive Switching Characteristics in Flexible Pt/MZT/Al Memory and Ni/NbO₂/Ni Selector Structure