Boron Segregation at Si ‐ SiO2 Interface as a Function of Temperature and Orientation

Abstract

The ion microprobe has been used to study the effects of crystal orientation and oxidation temperature on the segregation of boron at the silicon‐silicon dioxide interface. The segregation coefficient was determined by measuring directly the total boron concentration in the oxide and the silicon at the interface, for (100) and (111) silicon, oxidized at 1000°, 1100°, and 1200°C in dry oxygen. It was found that boron segregation coefficients for (111) silicon are higher than those for (100) silicon for corresponding oxidation temperatures, and that these segregation coefficients decrease with increasing temperature. The experimental values of the boron segregation coefficient, m , may be described bym)(100=0.03exp)(0.52/normalkT m)(111=0.05exp)(0.52/normalkTDiffusion coefficients were extracted from the experimental data using a modeling technique and agree well with the generally accepted values. The diffusion coefficients obtained for oxidizing ambient are given byD)(100=0.19exp)(−3.22/normalkT D)(111=2.04exp)(−3.57/normalkT

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“…In the absence of Ge, m s for B is close to the relevant published values (m s = 0.12 at 900 • C and m s = 0.17 at 1000 • C from the temperature dependence obtained in [21]). The increase in the B segregation coefficient in the presence of Ge can be attributed to elastic interaction of B atoms, whose covalent tetrahedral radius (r B = 0.11 nm) is smaller than that of Si atoms (r Si = 0.117 nm), with Ge atoms, whose covalent tetrahedral radius (r Ge = 0.122 nm) is greater than that of Si atoms.…”

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“…9 should be the segregation energy. Indeed, our modeling result is in excellent agreement with experiments [51].…”

“…The slope of our theoretical prediction (red line; arbitrary scaling) is in excellent agreement with experiments[51]. (For interpretation of the references to color in this figure legend, the reader is referred to the web version of this article.…”

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“…Hence, in simulations, a modified substrate is defined to match the measured response: the substrate is modified with a bulk resistivity of 20 cm everywhere, except 5 m (equal to the thickness of the oxide) underneath the oxide, where the resistivity is set to be 40 cm. This is due to the fact that during the process of growing a 5-m-thick oxide on top of a low-resistivity Si substrate (doped with boron), a thin segregated area just beneath the oxide is formed due to high segregation coefficient of boron at the oxide/silicon interface [24].…”