Bottom tunnel junction blue light-emitting field-effect transistors

Abstract

A recent thrust toward efficient modulated light emitters for use in Li-Fi communications has sparked renewed interest in visible III-N InGaN light-emitting diodes (LEDs). With their high external quantum efficiencies, blue InGaN LEDs are ideal components for such devices. We report a method for achieving voltage-controlled gate-modulated light emission using monolithic integration of fin- and nanowire-n–i–n vertical FETs with bottom-tunnel junction planar blue InGaN LEDs. This method takes advantage of the improved performance of bottom-tunnel junction LEDs over their top-tunnel junction counterparts, while allowing for strong gate control on a low-cross-sectional area fin or wire without sacrificing the LED active area as in lateral integration designs. Electrical modulation of five orders and an order of magnitude of optical modulation are achieved in the device.

Harnessing III-Nitride Built-In Field in Multi-Quantum Well LEDs

“…16,19 The authors investigated this topic using different types of experiments such as: current−voltage, parasitic recombination outside QW, 14 capacitance−voltage, and driftdiffusion calculations. 15 In terms of the electric field, inverted sequence of p-and ntype layers, results in junction field (F J ) and F P pointing in the same direction, leading to a heightened total electric field in QW compared to the "p-up" LED. However, an external forward bias reduces the electric field in QW, moving toward a flat-band condition, thereby enhancing wave function overlap.…”

“…For “p-down” LEDs, both forward bias and current direction are inverted with respect to the “p-up” device, while the energy barrier positions stay the same. The presence of the energy barriers and charge injection direction influence on performance of LEDs is described in literature, starting from the beginning of the XXI century , to modern devices with tunnel junctions (TJ). , The authors investigated this topic using different types of experiments such as: current–voltage, parasitic recombination outside QW, capacitance–voltage, and drift-diffusion calculations …”

“…The unconventional design of “p-down” LEDs grown on Ga-polar substrates is one example of the effective exploitation of the built-in field. − In this configuration, the sequence of p and n type layers in the LED is inverted, as illustrated in Figure b, contrasting it with the standard “p-up” LED. For “p-down” LEDs, both forward bias and current direction are inverted with respect to the “p-up” device, while the energy barrier positions stay the same.…”

Hybrid electroluminescent devices composed of (In,Ga)N micro-LEDs and monolayers of transition metal dichalcogenides

“…See ref. [35][36][37] for more details regarding the LED growth process, structure, and performance characterization and for a more thorough comparative analysis of standard and inverted LEDs.…”

Fabrication of Semi-Polar (11-22) GaN V-Groove MOSFET Using Wet Etching Trench Opening Technique

“…AN and its related materials have great potential in the field of power electronics and light-emitting diodes (LEDs). Recent demonstrations of monolithic integration of cplane GaN LEDs with vertical GaN transistors could provide a path for ultra-compact display applications such as virtual reality and augmented reality [1][2][3][4][5][6][7][8][9]. However, c-plane (0001) GaN materials has fundamental limitations: 1) for the LED, it is challenging to achieve a high quantum efficiency due to the quantum-confined stark effect and to incorporate a high indium content in the quantum wells for long wavelength emissions [10], [11].…”