2015
DOI: 10.1088/1674-1056/24/2/027101
|View full text |Cite
|
Sign up to set email alerts
|

Breakdown mechanisms in AlGaN/GaN high electron mobility transistors with different GaN channel thickness values

Abstract: Breakdown mechanisms in AlGaN/GaN high electron mobility transistors with different GaN channel thickness values * Ma Xiao-Hua(马晓华) a) , Zhang Ya-Man(张亚嫚) a) , Wang Xin-Hua(王鑫华) b) , Yuan Ting-Ting(袁婷婷) b) , Pang Lei(庞 磊) b) , Chen Wei-Wei(陈伟伟) a) , and Liu Xin-Yu(刘新宇) b) †

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

0
8
0

Year Published

2015
2015
2021
2021

Publication Types

Select...
6

Relationship

0
6

Authors

Journals

citations
Cited by 8 publications
(8 citation statements)
references
References 25 publications
0
8
0
Order By: Relevance
“…Furthermore, back barrier [104], [105] based on graded AlGaN or AlN material have been developed in order to reduce this phenomenon, increasing the blocking voltage. In both cases, the thickness of the GaN channel region must be carefully optimized with the aim of achieving a high electron density in the 2DEG, a good electron confinement in the channel, and low trapping effects, especially in the case of doping compensation [106], [107]. It can be pointed out that the AlGaN/GaN transistor breakdown voltage scales linearly for small gate-drain distances (typically below 15 µm), while larger gate-drain distances result in a saturation of VBR due to the conduction into the substrate triggered by the vertical electric field.…”
Section: Breakdown Mechanismsmentioning
confidence: 99%
“…Furthermore, back barrier [104], [105] based on graded AlGaN or AlN material have been developed in order to reduce this phenomenon, increasing the blocking voltage. In both cases, the thickness of the GaN channel region must be carefully optimized with the aim of achieving a high electron density in the 2DEG, a good electron confinement in the channel, and low trapping effects, especially in the case of doping compensation [106], [107]. It can be pointed out that the AlGaN/GaN transistor breakdown voltage scales linearly for small gate-drain distances (typically below 15 µm), while larger gate-drain distances result in a saturation of VBR due to the conduction into the substrate triggered by the vertical electric field.…”
Section: Breakdown Mechanismsmentioning
confidence: 99%
“…On-state resistance is known to decrease as channel thickness increases. 25 This is due to a wider current path and higher 2DEG concentration resulting from the thicker channel region. This trend for R DS(on) is verified in Figure 3b.…”
Section: Channel Layer Optimization-optimization Of Channel Layermentioning
confidence: 99%
“…In addition, high electric field in the buffer can generate defects due to grain-boundary states. 25,28 As the electric field is increased, more defects are produced leading to a high defect density which can develop into an additional electron leakage path as defects overlap or develop into large clusters. 32,33 In any case, reducing the electric field intensity is critical to increasing breakdown voltage.…”
Section: Channel Layer Optimization-optimization Of Channel Layermentioning
confidence: 99%
“…Owing to the strong polarization charge in the AlGaN/GaN hetero-junction, high-density two-dimensional electron gas (2DEG) is formed at the interface between GaN and AlGaN. [1][2][3][4][5] It has drawn intensive attention for high voltage applications due to its wide band gap. However, it is still a challenge to improve the breakdown voltage.…”
Section: Introductionmentioning
confidence: 99%