Broken Symmetry Effects due to Polarization on Resonant Tunneling Transport in Double-Barrier Nitride Heterostructures

Encomendero, Jimy; Protasenko, Vladimir; Sensale‐Rodriguez, Berardi; Fay, Patrick; Rana, Farhan; Jena, Debdeep; Xing, Huili Grace

doi:10.1103/physrevapplied.11.034032

Cited by 35 publications

(31 citation statements)

References 59 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, GaN/AlN or GaN/AlGaN heterointerfaces having fine flatness in an atomic level, which can be realized by molecular beam epitaxy techniques, are essential to obtain NDRs with high peak‐to‐valley ratios for terahertz oscillators, as reported by the previous studies. [ 19–23 ] Therefore, we are investigating a new nonvolatile memory using the intersubband transitions and electron accumulation in GaN/AlN RTDs and its growth method based on metalorganic vapor‐phase‐epitaxy (MOVPE) techniques.…”

Section: Introductionmentioning

confidence: 99%

Growth and Characterization of GaN/AlN Resonant Tunneling Diodes for High‐Performance Nonvolatile Memory

Nagase

Takahashi

Shimizu

2020

Physica Status Solidi (a)

View full text Add to dashboard Cite

GaN/AlN resonant tunneling diodes (RTDs) are studied to realize a high‐speed nonvolatile memory based on the intersubband transactions and electron accumulation in the quantum well, which has the potential to operate at picosecond time scales. The crystal quality of GaN/AlN RTDs is improved by changing the growth conditions and structure of the buffer layer. The surface roughness and dislocation density of the GaN/AlN RTDs are successfully suppressed, and clear ON/OFF switching due to intersubband transitions is observed by inputting pulse voltage sequences. However, the voltages for write and erase operations are changed by improving the crystal quality of GaN/AlN RTDs. The theoretical analysis of resonant levels in the GaN/AlN RTDs indicates that the voltages for write and erase operations are very sensitive to the well and barrier widths and the density of electrons accumulating in the quantum well. Based on the results, the design of GaN/AlN RTDs for higher‐performance nonvolatile memory operations is investigated.

show abstract

Section: Introductionmentioning

confidence: 99%

Growth and Characterization of GaN/AlN Resonant Tunneling Diodes for High‐Performance Nonvolatile Memory

Nagase

Takahashi

Shimizu

2020

Physica Status Solidi (a)

View full text Add to dashboard Cite

show abstract

“…It is worth mentioning that the low temperature PVCR value in such DA barrier RTDs is equal to or even higher than the reported values in AlN barrier RTDs and is one of the highest among those reports showing reproducible NDR. [ 13–26 ]…”

Section: Resultsmentioning

confidence: 99%

“…In Grier and Encomendero's work, the effects of inelastic scattering in Al(Ga)N/GaN RTDs have been studied using semi‐classical scattering rates. [ 14,19 ] To quantify the quantum confinement improvement by using DA barriers, a simplified model is introduced analogously based on Mark Levence's earlier work to calculate the resonant energy width using the measured PVCR values. [ 39–41 ] Figure 4b shows the PVCR values of three samples at 300 and 6.6 K, and the corresponding resonant energy widths for the first resonant peak under forward bias.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Controlling Phase‐Coherent Electron Transport in III‐Nitrides: Toward Room Temperature Negative Differential Resistance in AlGaN/GaN Double Barrier Structures

Wang

Chen

et al. 2020

Adv Funct Materials

View full text Add to dashboard Cite

Resonant tunneling of electrons is important for the manufacture of high‐speed electronic oscillators and the electron injection control in quantum cascade lasers. In this work, room temperature negative differential resistance (NDR) in AlGaN/GaN double barrier structure with AlN/GaN digital alloy (DA) barriers is demonstrated. The peak‐to‐valley current ratio (PVCR) ranges from 1.1 to 1.24 at room temperature and becomes 1.5 to 2.96 at low temperatures, whereas no NDR is observed in double barrier structures with conventional ternary AlGaN barriers. The room temperature NDR together with the high PVCR at low temperature is attributed to the suppression of alloy disorder scattering by introducing AlN/GaN DA barriers. This work presents the successful control of phase‐coherent electron transport in III‐nitride heterostructures and is expected to benefit the future design of nitride‐based resonant tunneling structures and high‐speed electronic devices.

show abstract

“…Remarkably, the theoretical cut-off frequency of single DBQW-QRTs is limited by the tunneling escape time in the quantum well [44]. As a result, the quantum resonant tunneling effect and NDC characteristic has been exploited in a wide-range of electronic and photonic devices, including THz quantum cascade lasers for gas sensing [46], THz emitters and detectors for imaging [47], and communications beyond 5G (world record oscillation at 1.92 THz [45]), single-photon switches and detectors [48,49], electroluminescence in III-nitride LED sources [50], III-V unipolar bistable QRT [51], bipolar QRT-based LEDs [52][53][54] and lasers [55,56], near-IR photodetectors for optical communications [57], and mid-IR detectors for sensing [58], to name only a few. For neuron computation, early works evoked QRTbased devices as potential nanoelectronic candidates for cellular neural networks as a form of threshold logical gates [59].…”

Section: Introductionmentioning

confidence: 99%

NanoLEDs for energy-efficient and gigahertz-speed spike-based sub-λ neuromorphic nanophotonic computing

2020

View full text Add to dashboard Cite

AbstractEvent-activated biological-inspired subwavelength (sub-λ) photonic neural networks are of key importance for future energy-efficient and high-bandwidth artificial intelligence systems. However, a miniaturized light-emitting nanosource for spike-based operation of interest for neuromorphic optical computing is still lacking. In this work, we propose and theoretically analyze a novel nanoscale nanophotonic neuron circuit. It is formed by a quantum resonant tunneling (QRT) nanostructure monolithic integrated into a sub-λ metal-cavity nanolight-emitting diode (nanoLED). The resulting optical nanosource displays a negative differential conductance which controls the all-or-nothing optical spiking response of the nanoLED. Here we demonstrate efficient activation of the spiking response via high-speed nonlinear electrical modulation of the nanoLED. A model that combines the dynamical equations of the circuit which considers the nonlinear voltage-controlled current characteristic, and rate equations that takes into account the Purcell enhancement of the spontaneous emission, is used to provide a theoretical framework to investigate the optical spiking dynamic properties of the neuromorphic nanoLED. We show inhibitory- and excitatory-like optical spikes at multi-gigahertz speeds can be achieved upon receiving exceptionally low (sub-10 mV) synaptic-like electrical activation signals, lower than biological voltages of 100 mV, and with remarkably low energy consumption, in the range of 10–100 fJ per emitted spike. Importantly, the energy per spike is roughly constant and almost independent of the incoming modulating frequency signal, which is markedly different from conventional current modulation schemes. This method of spike generation in neuromorphic nanoLED devices paves the way for sub-λ incoherent neural elements for fast and efficient asynchronous neural computation in photonic spiking neural networks.

show abstract

Broken Symmetry Effects due to Polarization on Resonant Tunneling Transport in Double-Barrier Nitride Heterostructures

Cited by 35 publications

References 59 publications

Growth and Characterization of GaN/AlN Resonant Tunneling Diodes for High‐Performance Nonvolatile Memory

Growth and Characterization of GaN/AlN Resonant Tunneling Diodes for High‐Performance Nonvolatile Memory

Controlling Phase‐Coherent Electron Transport in III‐Nitrides: Toward Room Temperature Negative Differential Resistance in AlGaN/GaN Double Barrier Structures

NanoLEDs for energy-efficient and gigahertz-speed spike-based sub-λ neuromorphic nanophotonic computing

Contact Info

Product

Resources

About