2003
DOI: 10.1364/ol.28.001132
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Buried ion-exchanged glass waveguides:burial-depth dependence on waveguide width

Abstract: A detailed theoretical and experimental study of the depth dependence of buried ion-exchanged waveguides on waveguide width is reported. Modeling, which includes the effect of nonhomogeneous time-dependent electric field distribution, agrees well with our experiments showing that burial depth increases linearly with waveguide width. These results may be used in the proper design of integrated optical circuits that need waveguides of different widths at different sections, such as arrayed waveguide gratings.

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Cited by 37 publications
(28 citation statements)
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“…Further details of the process have been described in Ref. 20. With these process parameters, waveguides are buried 5.7-6.8 m deep in the glass substrate depending on the mask opening width.…”
Section: Fabricationmentioning
confidence: 99%
“…Further details of the process have been described in Ref. 20. With these process parameters, waveguides are buried 5.7-6.8 m deep in the glass substrate depending on the mask opening width.…”
Section: Fabricationmentioning
confidence: 99%
“…This has been shown to manifest as a noticeable difference in the depth of waveguides buried in a field-assisted process, depending on their pre-burial width. 54 …”
Section: Modeling the Electric Fieldmentioning
confidence: 99%
“…Ref. [10] presented an investigation of the dependence of burial-depth on waveguide width for a buried ionexchanged glass waveguide. In this paper, the influence of the waveguide width of the photomask on the ion concentration distribution is investigated for ion-exchanged glass waveguides based on thermal ion-exchange and annealing.…”
Section: Introductionmentioning
confidence: 99%