Magnetotransport experiments on an electron accumulation system at the interface between t h e narrow-gap semiconductor cadmium mercury telluride (Hg,,Cd,Te (CMT)) and a passivating anodic oxide yield data of an extremely high quality and t h e first observation of t h e quantum Hall effect in this system. It is shown that the quality of the observed data is a result of a sharp increase in the resistivity of t h e bulk n-type CMT in a magnetic field. T h e Landau level structure of the system is calculated using a very simple scheme adapted from one originally devised for a two-dimensional system in lnSb a n d the conductivity tensor component oxx is modelled. The alternative assumptions of fixed carrier concentration and fixed Fermi energy are found to givenearly equivalent results and a good qualitative agreement with experiment is found. Estimates of the Landau level broadening parameters are made and the zerofield electron mobilities implied by these are ComDared with those deduced from cyclotron resonance measurements.