Capacitive coupled non-zero I–V and type-II memristive properties of the NiFe2O4–TiO2 nanocomposite

Ahir, Namita A.; Takaloo, Ashkan Vakilipour; Nirmal, Kiran A.; Kundale, Somnath S.; Chougale, Mahesh Y.; Bae, Jinho; Kim, Deok‐kee; Dongale, Tukaram D.

doi:10.1016/j.mssp.2020.105646

Cited by 30 publications

(13 citation statements)

References 60 publications

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“…Both of these results suggested that the Ag/Co x (PO 4 ) 2 /ITO resistive switching device is an excellent candidate for the nonvolatile memory application. Interestingly, the device shows the double-valued charge–flux property, which is against a definition of the ideal memristor . Considering this, the fabricated Ag/Co x (PO 4 ) 2 /ITO device is a nonideal memristor or memristive device.…”

Section: Resultsmentioning

confidence: 91%

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Binder-Free Synthesis of Nanostructured Amorphous Cobalt Phosphate for Resistive Memory and Artificial Synaptic Device Applications

Katkar

Padalkar

Kumbhar

et al. 2022

ACS Appl. Electron. Mater.

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The rise of artificial intelligence and machine learning demands versatile electronic devices for memory and braininspired computing applications. The electronic materials are the backbones of these applications. Considering this, a functional Co x (PO 4 ) 2 nanomaterial was synthesized for resistive memory and neuromorphic computing applications. The synthesized nanomaterial was well characterized by using X-ray diffraction, Fourier transform infrared spectroscopy, field emission-scanning electron microscopy, and X-ray photoelectron spectroscopy. The fabricated Ag/Co x (PO 4 ) 2 /ITO device shows bipolar resistive switching and memristive properties. The SET and RESET voltages were analyzed by using different statistical measures, and their distribution was studied by using the Weibull technique. The results suggested that the SET voltages were more uniformly distributed than the RESET voltage. The switching nonlinearity was modeled and predicted by using Holt's exponential smoothingbased statistical time series analysis method. In the case of nonvolatile memory tests, the device shows good endurance (10 3 cycles) and memory retention (3 × 10 4 s) with excellent memory window (1.7 × 10 3 ) properties. Moreover, the device can mimic the potentiation−depression and spike-timing-dependent plasticity-based Hebbian learning rules, suggesting Co x (PO 4 ) 2 is a potential nanomaterial for the fabrication of artificial synapse. The detailed analysis of electrical results suggested that the space-charge-limited current-based charge transport was responsible for the device conduction, whereas the formation and rupture of conductive filament(s) were responsible for the resistive switching in the Ag/Co x (PO 4 ) 2 /ITO memristive device. The results of the present investigation suggested that the Co x (PO 4 ) 2 nanomaterial is a potential candidate for resistive memory and brain-inspired computing applications

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Section: Resultsmentioning

confidence: 91%

“…Interestingly, the device shows the double-valued charge−flux property, which is against a definition of the ideal memristor. 49 Considering this, the fabricated Ag/Co x (PO 4 ) 2 /ITO device is a nonideal memristor or memristive device.…”

Section: Resultsmentioning

confidence: 99%

Binder-Free Synthesis of Nanostructured Amorphous Cobalt Phosphate for Resistive Memory and Artificial Synaptic Device Applications

Katkar

Padalkar

Kumbhar

et al. 2022

ACS Appl. Electron. Mater.

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“…We also demonstrated that the AZB-based memristive devices can realize logic operation and simulate nerve synapses by controlling CDS and/or MDS under different voltage ranges (Figure ). Compared to memristors with only MDS, additional functionalities offered by the AZB-based memristive devices will be very useful for the artificial intelligence applications. − In addition, the memristive devices with CDS can also be used to develop adjustable leaky-integrate-and-fire neurons, which show great potential in the development of brain-like chips.…”

Section: Resultsmentioning

confidence: 99%

Voltage-Controlled Conversion from CDS to MDS in an Azobenzene-Based Organic Memristor for Information Storage and Logic Operations

Sun

Ngai

Zhou

et al. 2022

ACS Appl. Mater. Interfaces

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For organic memristors, non-zero-crossing current−voltage (I− V) curves are often observed, which can be attributed to capacitive effects. If the conversion between the capacitance-dominated state (CDS) and the memristance-dominated state (MDS) can be realized in a controllable manner, more device functions can be obtained. In this work, a two-terminal memristor using a common organic dye, azobenzene (AZB), as the active layer was prepared. It is found that as the applied voltage gradually increases, the device can transition from CDS to MDS. In the low voltage range (<1 V), the device is in CDS, and the capacitance is significantly increased by ∼10 4 compared to the theoretical value. In the high voltage range (>1 V), the device is in MDS, achieving an HRS (high resistance state)/LRS (low resistance state) resistance ratio of ∼10 4 , and the logic operations are achieved. Through the analysis of the I−V curve, energy diagram of the materials, and computer simulation results, the mechanisms of CDS, MDS, and their conversion are proposed. This work provides an in-depth understanding of the working mechanism of organic memristors and demonstrates the potential of AZB-based organic memristors for information storage and logic display applications.

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“…To understand the movement of electrons as a conduction mechanism, a switching model has been designed for neuromeric type I – V switching of the Ag/GaN/ZnO/ITO device as shown in Figure . When we apply the positive voltage on the top electrode, the oxidation occurs, the Ag is changed as Ag → Ag + + e – , and the metallic Ag + ions start moving toward the bottom electrode. − These ions easily pass through a minor interface barrier of Ag/GaN and arrive at the bottom electrode interface ZnO/ITO through the active layer. The decrease in barrier height between Ag and GaN was due to the applied positive voltage on TE Ag .…”

Section: Resultsmentioning

confidence: 99%

Asymmetric GaN/ZnO Engineered Resistive Memory Device for Electronic Synapses

Khan

Saqib

Kim

et al. 2022

ACS Appl. Electron. Mater.

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The asymmetric resistive memory device can be more suitable to reduce the crosstalk effect in a crossbar array. Similarly, this work focused on the material and design concept to achieve a one-directional engineered resistive switching memory device to reduce crosstalk effect for electronic synapses. The pulsed modulated DC sputtered crystalline GaN heterojunction with ITO/ZnO Schottky diode, resulting in one-directional digital resistive switching. The DC sputtered polycrystalline GaN is used on top of the ITO/ZnO Schottky barrier to achieve asymmetric multistate resistive switching behavior. The synaptic operation helps to investigate the stable synaptic spike-rate-dependent plasticity (SRDP), spike-timing-dependent plasticity (STDP), and long-term potentiation/depression (LTP/LTD). The weight change of the device was evaluated by the Modified National Institute of Standards and Technology (MNIST) image recognition technique at the system-level neural network. The simulation part deepens the concept that an asymmetric neuromorphic device can help reduce the crosstalk effect in a crossbar array to implement AI inference applications.

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Capacitive coupled non-zero I–V and type-II memristive properties of the NiFe2O4–TiO2 nanocomposite

Cited by 30 publications

References 60 publications

Binder-Free Synthesis of Nanostructured Amorphous Cobalt Phosphate for Resistive Memory and Artificial Synaptic Device Applications

Binder-Free Synthesis of Nanostructured Amorphous Cobalt Phosphate for Resistive Memory and Artificial Synaptic Device Applications

Voltage-Controlled Conversion from CDS to MDS in an Azobenzene-Based Organic Memristor for Information Storage and Logic Operations

Asymmetric GaN/ZnO Engineered Resistive Memory Device for Electronic Synapses

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