Carbon nanotubes for next generation very large scale integration interconnects

Srivastava, Ashok; Xu, Yao; Sharma, Ashwani

doi:10.1117/1.3446896

Cited by 49 publications

(54 citation statements)

References 83 publications

(144 reference statements)

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“…Most of them explores chemical vapor deposition technologies and successful fabrication experience on CNT includes [8], [9], [10], [11], [12], [13]. It has been shown that bundled SWCNTs can outperform copper interconnects in signal wave transportation along a long global interconnect [7], [14], [15], [16], [17]. For example, it is shown in [7] that the resistance of bundled SWCNTs can be achieved 50% smaller compared to that of copper at the same size of a long interconnect at 22nm technology node.…”

Section: Introductionmentioning

confidence: 99%

Buffering Single-Walled Carbon Nanotubes Bundle Interconnects for Timing Optimization

Liu

Zhou

2014

2014 IEEE Computer Society Annual Symposium on VLSI

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As prevailing copper interconnect technology advances to its fundamental physical limit, interconnect delay due to ever-increasing wire resistivity has greatly limited the circuit miniaturization. Single-walled carbon nanotubes (SWCNTs) bundle interconnects have emerged as a promising replacement material for copper interconnects due to their superior conductivity. Previous works have focused on studying device and interconnect modeling for bundled SWCNTs while none of them consider deployment of such an advanced technology into VLSI physical design.To the best of the authors' knowledge, this paper develops the first physical design technique for the interconnect optimization using carbon nanotube interconnects. We propose a timing driven buffer insertion technique for bundled SWCNTs, where the standard buffering algorithm has been enhanced to accommodate some features in the SWCNT timing modelling. Our experimental results on a set of scaled industrial nets at 22nm technology demonstrate that compared to copper buffering, CNT buffering can save over 50% buffer area with the same timing constraint. In addition, CNT buffering can effectively reduce the delay by up to 32%. Further, CNT buffering runs in time similar to copper buffering.

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Section: Introductionmentioning

confidence: 99%

Buffering Single-Walled Carbon Nanotubes Bundle Interconnects for Timing Optimization

Liu

Zhou

2014

2014 IEEE Computer Society Annual Symposium on VLSI

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“…Due to high electro-thermal conductivities of different variants of carbon nanotube (CNT) and graphene, research has advanced further to explore potential of these nano-materials as future VLSI interconnect [1][2][3][4][5][6] and sensors [7,8]. Because of high thermal conductivity, CNT interconnects can quickly drain out heat energy to make interconnect more thermally stable [4,9].…”

Section: Introductionmentioning

confidence: 99%

“…Considering all these benefits metallic single-wall carbon nanotube (SWCNT) and multiwall carbon nanotube (MWCNT) have been studied intensely as a future VLSI interconnects material [10][11][12][13][14][15]. It is now a common trend to study the performances of interconnects made of all the variants of CNT and their bundles [3,[13][14][15]. Most of these previous works focused on electronic transport rather than giving focus to thermal transport, thermal instability induced performance degradation and ultimately thermal breakdown of interconnect.…”

Section: Introductionmentioning

confidence: 99%

Characterization of SWCNT Bundle Based VLSI Interconnect with Self-heating Induced Scatterings

Mohsin

Srivastava

2015

Proceedings of the 25th Edition on Great Lakes Symposium on VLSI

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Performance of single walled carbon nanotube (SWCNT) bundle-based VLSI interconnects has been studied under the strong influence of scatterings induced by self-heating. Landauer Büttiker formalism along with Fourier heat transfer equation have been used to compute interconnect scattering parameters at various cross sectional areas of the interconnection. Cross sectional temperature calculation was performed using finite difference method considering temperature dependent thermal conductivity for primitive defect-less SWCNT bundles. Using the relaxation time approximation, we have studied scattering dynamics in calculating equivalent resistance. Electronic and thermal transport equations have been coupled and solved iteratively to get accurate estimation of temperatures and resistances. Study of scattering parameters shows low backscattering however significant transmission loss. Below 100GHz, for a 1µm long interconnect with 10 nm by10 nm cross sectional area shows S 21 as high as 80dB. In terahertz regime transmission parameter S 21 is in the range of few hundreds dB.

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“…Beside high electro-thermal conductivities, nanometer feature size made these materials the perfect candidates to embed into shrinking devices. Since the discovery of carbon nanotubes researchers proposed various applications of this material ranging from device designing to sensor applications [3][4][5][7][8][9][10][11] . It has been found that CNTs have very interesting temperature dependent resistivity which can be exploited in designing temperatures sensors 12,13 .…”

Section: Introductionmentioning

confidence: 99%

Metallic single-walled, carbon nanotube temperature sensor with self heating

2014

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A metallic single-walled carbon nanotube (SWCNT) has been proposed as a highly sensitive temperature sensor with consideration of self-heating induced scattering. This sensor can be implemented to sense temperature spanning from 20º C to 400º C with high temperature coefficient of resistivity (TCR) ranging from 0.0035/ºC to 0.009/ ºC. Important aspect of this work is consideration of self-heating in SWCNT which was not considered in earlier carbon nanotube based temperature sensors. We have studied a metallic SWCNT over a silicon dioxide substrate and in between two metal contacts. Bias voltage of 0.1V has been applied in between these two contacts. For resistivity calculation, we have utilized one-dimensional semi-classical transport model assuming SWCNT is perfectly conducting. The heat flow equation has been solved assuming steady state flow of heat. We have also assumed that contact and substrate are in thermal equilibrium with the surroundings. Since self-heating significantly affects electro-thermal transport, incorporation of this phenomenon enables to design and model ambient temperature sensor accurately. We have studied CNT sensor with different lengths and chiralities. The results show that resistances of longest (3µm) and thinnest (9, 0) CNTs increase rapidly with temperature. For a 3µm long metallic SWCNT with chirality index (9, 0), TCR has the maximum value (~0.009/ ºC).

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Carbon nanotubes for next generation very large scale integration interconnects

Cited by 49 publications

References 83 publications

Buffering Single-Walled Carbon Nanotubes Bundle Interconnects for Timing Optimization

Buffering Single-Walled Carbon Nanotubes Bundle Interconnects for Timing Optimization

Characterization of SWCNT Bundle Based VLSI Interconnect with Self-heating Induced Scatterings

Metallic single-walled, carbon nanotube temperature sensor with self heating

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