Carrier recombination mechanism and photovoltage deficit in 1.7-eV band gap near-stoichiometric Cu(In,Ga)
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Shukla, Sudhanshu; Adeleye, Damilola; Sood, Mohit; Ehre, Florian; Lomuscio, Alberto; Weiss, Thomas Paul; Siopa, Daniel; Melchiorre, Michele; Siebentritt, Susanne

doi:10.1103/physrevmaterials.5.055403

Cited by 11 publications

(9 citation statements)

References 65 publications

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“…It is known that the deep gap states present at GBs can act as recombination centers. [ 49 ] On the other hand, when the GB region is Cu‐poor (see Figure 9b), narrow gap states close to the valence band maximum and conduction band minimum are observed. Interestingly, these gap states are not vanished but only slightly diminished by inserting Na dopants at the GB region (see Figure 9d).…”

Section: Resultsmentioning

confidence: 99%

Fingerprints Indicating Superior Properties of Internal Interfaces in Cu(In,Ga)Se₂ Thin‐Film Solar Cells

et al. 2022

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Growth of Cu(In,Ga)Se2 (CIGS) absorbers under Cu‐poor conditions gives rise to incorporation of numerous defects into the bulk, whereas the same absorber grown under Cu‐rich conditions leads to a stoichiometric bulk with minimum defects. This suggests that CIGS absorbers grown under Cu‐rich conditions are more suitable for solar cell applications. However, the CIGS solar cell devices with record efficiencies have all been fabricated under Cu‐poor conditions, despite the expectations. Therefore, in the present work, both Cu‐poor and Cu‐rich CIGS cells are investigated, and the superior properties of the internal interfaces of the Cu‐poor CIGS cells, such as the p–n junction and grain boundaries, which always makes them the record‐efficiency devices, are shown. More precisely, by employing a correlative microscopy approach, the typical fingerprints for superior properties of internal interfaces necessary for maintaining a lower recombination activity in the cell is discovered. These are a Cu‐depleted and Cd‐enriched CIGS absorber surface, near the p–n junction, as well as a negative Cu factor (∆β) and high Na content (>1.5 at%) at the grain boundaries. Thus, this work provides key factors governing the device performance (efficiency), which can be considered in the design of next‐generation solar cells.

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Section: Resultsmentioning

confidence: 99%

Fingerprints Indicating Superior Properties of Internal Interfaces in Cu(In,Ga)Se₂ Thin‐Film Solar Cells

et al. 2022

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“…This band-tail luminescence caused by the spatial potential uctuations has been discovered in kesterite solar cells (e.g., CZTS and CZTSe). [39][40][41] It is worth noting that in the kesterite solar cells, such band-tail states deteriorate the device performance. 41 Interestingly, the band-tail states in our material help to maintain a long carrier lifetime, which is conducive to achieving visible-light-driven overall water splitting.…”

Section: Resultsmentioning

confidence: 99%

“…This is because the band-tail states are caused by two different mechanisms. [41][42][43] In kesterite the band-tail states result from electrostatic potential uctuations caused by deviations in the distribution of charged defects, which are commonly associated with high defect concentration in the material. In contrast, the band-tail states in Y 2 Ti 2 O 5 S 2 are likely originated from the bandgap uctuations caused by deviations in the distribution of neutral defects, as revealed later.…”

Section: Resultsmentioning

confidence: 99%

Band-tail states meditated visible-light-driven overall water splitting in Y₂Ti₂O₅S₂ photocatalyst

Zha

Zhang

et al. 2022

J. Mater. Chem. A

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“…Given a negligible effect of recombination on current, it is natural to expect its similarly weak effect on device voltage thus questioning the role of SRH recombination altogether. There is however an alternative hypothesis claiming a significant deficit (loss) of PV voltages and relating it to recombination either directly or defined vaguely in terms of 'material quality' exhibiting itself e. g. in Urbach tails [14][15][16][17][18][19][20][21][22][23][24][25][26][27]. More specifically, the open circuit voltage (V oc ) deficit is defined as…”

Section: Introductionmentioning

confidence: 99%

Voltage deficit in PV with suppressed recombination

Karpov

Shvydka

2023

Applied Physics Letters

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The observed open circuit voltages in best performing solar cells are explained outside of the recombination paradigm, based on such factors as electrostatic screening, Meyer–Neldel effect, and lateral nonuniformities. The underlying concept of suppressed recombination presents a long neglected alternative pathway to efficient photovoltaic. The criteria of suppressed recombination and effective charge carrier extraction are consistent with the data for best performing solar cells.

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Carrier recombination mechanism and photovoltage deficit in 1.7-eV band gap near-stoichiometric Cu(In,Ga) S2

Cited by 11 publications

References 65 publications

Fingerprints Indicating Superior Properties of Internal Interfaces in Cu(In,Ga)Se₂ Thin‐Film Solar Cells

Fingerprints Indicating Superior Properties of Internal Interfaces in Cu(In,Ga)Se₂ Thin‐Film Solar Cells

Band-tail states meditated visible-light-driven overall water splitting in Y₂Ti₂O₅S₂ photocatalyst

Voltage deficit in PV with suppressed recombination

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Carrier recombination mechanism and photovoltage deficit in 1.7-eV band gap near-stoichiometric Cu(In,Ga) S2

Cited by 11 publications

References 65 publications

Fingerprints Indicating Superior Properties of Internal Interfaces in Cu(In,Ga)Se2 Thin‐Film Solar Cells

Fingerprints Indicating Superior Properties of Internal Interfaces in Cu(In,Ga)Se2 Thin‐Film Solar Cells

Band-tail states meditated visible-light-driven overall water splitting in Y2Ti2O5S2 photocatalyst

Voltage deficit in PV with suppressed recombination

Contact Info

Product

Resources

About

Fingerprints Indicating Superior Properties of Internal Interfaces in Cu(In,Ga)Se₂ Thin‐Film Solar Cells

Fingerprints Indicating Superior Properties of Internal Interfaces in Cu(In,Ga)Se₂ Thin‐Film Solar Cells

Band-tail states meditated visible-light-driven overall water splitting in Y₂Ti₂O₅S₂ photocatalyst