Carrier stored trench-gate bipolar transistor (CSTBT)-a novel power device for high voltage application

Takahashi, Hideki; Haruguchi, H.; Hagino, H.; Yamada, T.

doi:10.1109/ispsd.1996.509513

Cited by 174 publications

(60 citation statements)

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“…2, comparison of the doping profile of CS layers, because of the ultra-deep diffusion, the peak doping concentration of DR layer is less than any of the CS layers, but the total N + carrier numbers of DR layer which distributed in a longer range between P base and N À drift region are not less than those of CS layers. So the DR layers can restrict the movement of more holes to P base, and be "stored" in the DR layer, which lower the V ce(SAT) under the high collector current density [1].…”

Section: Results and Discussmentioning

confidence: 99%

“…Transistor (IGBT) has been significantly improved, owing to the appearance of some new technologies, such as trench gate, carrier stored (CS) [1], and enhanced planer (EP) [2], for the emitter side and field stop (FS) [3], Soft Punch-Through (SPT) [4], and Light Punch-Through (LPT) [5] for the collector side. As an advanced trench gate IGBT, the CSTBT with LPT structure incorporates many innovations and demonstrates excellent overall performance [6].…”

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confidence: 99%

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A novel high-voltage trench gate insulated gate bipolar transistor with diffusion remnant layer

Zhang

Han

Zhang

et al. 2013

IEICE Electron. Express

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A novel high-voltage trench gate insulated gate bipolar transistor with diffusion remnant (DR) layer (DR-IGBT) is proposed in this letter. The DR layer in the emitter side which is formed by grinding after ultra-deep N + diffusion helps to stored the carrier and improves the on-state voltage drop (V ce(SAT) ). The DR-IGBT has a better trade-off between the breakdown voltage (BV) and V ce(SAT) than the carrier stored trench bipolar transistor (CSTBT). The doping profile of diffusion remnant layer makes the junction of the pbase/DR layer nearly linearly graded junction, which does not decline the BV too much. The depth of the diffusion remnant layer and N + diffusion layer less impacts BV and V ce(SAT) unless the diffusion depth is reduced.

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Section: Results and Discussmentioning

confidence: 99%

mentioning

confidence: 99%

A novel high-voltage trench gate insulated gate bipolar transistor with diffusion remnant layer

Zhang

Han

Zhang

et al. 2013

IEICE Electron. Express

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“…This is the case of the CSTBT (Carrier Stored Trench gate Bipolar Transistor) from Mitsubishi [37], where the built-in potential across the n-buried/nbase junction prevents the hole flow. A similar concept has been adopted by ABB [38] to prevent the hole current flow into the p-body region.…”

Section: Igbtsmentioning

confidence: 99%

A Review of Si MOS-gated Power Switches and PiN Rectifiers

et al. 2012

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Original scientific paperRevolutionary advances and developments have been made in power semiconductor device technologies during the last decades which have allowed the improvement of power electronic systems in terms of their efficiency and reliability. The advent of MOS-gated power switches such as the power MOSFET and the IGBT showing high input impedance has been a real breakthrough in the design and fabrication of power electronic systems. This paper reviews the recent progress in the development of Si MOS-gated power devices and rectifiers. The evolution of these devices' technologies together with the introduction of revolutionary device concepts is also discussed. Concretely, the introduction of trench technologies for power MOSFETs and the use of the super-junction concept for breaking the 1D-silicon limit are highlighted. Developments in IGBTs such as those based on the use of thin wafers and strategies for optimising the plasma distribution in PT IGBTs during the on-state are also addressed. Finally, advances in PiN diode technologies including new concepts for both the anode and the cathode structures are also reviewed. These approaches have allowed the reduction of the PiN total losses and a soft reverse recovery behaviour, leading to a more rugged device.Key words: MOS-gated power devices, power MOSFETs, CoolMOS, super-junction devices, IGBTs, PiN rectifiers Prikaz stanja silicijevih MOS upravljanih učinskih sklopova i PiN ispravljača. U posljednjim desetljećima svjedočimo razvoju sustava učinske elektronike u pogledu povećanja efikasnosti i pouzdanosti. Napredak je omogućen zahvaljujući izvanrednom napredku koji je postignut na području učinskih poluvodiča. Pojava MOS upravljanih učinskih sklopova s visokom ulaznom impedancijom, kao što su MOSFET i IGBT, rezultirao je probojem u projektiranju i proizvodnji sustava učinske elekronike. Ovajčlanak daje uvid u napredak koji je u posljednje vrijeme ostvaren u razvoju silicijeve MOS upravljane učinske elektronike i ispravljača. Uz dosadašnji razvoj tehnologije navedenih komponenata, učlanku je uključen i osvrt na revolucionarne koncepte budućeg razvoja. Konkretno, u radu su objašnjene tehnologija rova za MOSFET i korištenje koncepta super spoja za probijanje granice jednodimenzionalnog silicija. Razmatrana su i poboljšanja IGBT-ova koja se baziraju na uporabi tankih pločica a strategijama optimiranja distribucije plazme u PT IGBT-ovima za vrijeme aktivnog stanja. Konačno, prikazan je i napredak u tehnologiji PiN dioda koji uključuje nove strukturalne koncepte katode i anode. Ovi pristupi su omogućili smanjenje ukupnih gubitaka PiN diode i blagu dinamiku reverznog oporavka, što rezultira povećanjem robusnosti sklopa.

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“…In 1979 and 1980, there were some more publications [6]- [13] related to the invention of IGBT with different design concepts. Generally, there are few main categories of discrete IGBTs [14], some examples of which are DMOS IGBT [15][16], trench IGBT [17]- [20], soft punch through IGBT [21], injection enhanced insulated gate bipolar transistor [22], [23], carrier stored gate bipolar transistor [24], high-conductivity IGBT [25] and super junction bipolar transistor [26] [27]. In contrast to discrete IGBTs, the integrated IGBT has complementary metal-oxide-semiconductor (CMOS) compatibility and hence is the…”

Section: Literature Review Of Techniques Used In Ligbtmentioning

confidence: 99%

A Review of techniques used in Lateral Insulated Gate Bipolar Transistor (LIGBT)

Tee¹

2012

IOSRJEEE

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Carrier stored trench-gate bipolar transistor (CSTBT)-a novel power device for high voltage application

Cited by 174 publications

References 1 publication

A novel high-voltage trench gate insulated gate bipolar transistor with diffusion remnant layer

A novel high-voltage trench gate insulated gate bipolar transistor with diffusion remnant layer

A Review of Si MOS-gated Power Switches and PiN Rectifiers

A Review of techniques used in Lateral Insulated Gate Bipolar Transistor (LIGBT)

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