Carrier thermalization under stimulated emission in In0.17Ga0.83N epilayer at room temperature

Shang, Zhengjun; Zheng, Xiaohong; Cao, Yang; Chen, Y.; Li, B.; Sun, Lin; Tang, Zheng; Zhao, Degang

doi:10.1063/1.4903743

Cited by 3 publications

(5 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Similar anomalous S-shape shift of the PL energy has been observed by several groups [24][25][26][27] and was attributed to the existence of localized states caused by imperfections in the InGaN layer. It is worthy to note that the SE peak energy keeps almost unchanged at temperatures from 4 K to 40 K. This is quite different from the previous reports [20] that the typical S-shaped behavior of exciton SPE exhibits a decreasing trend at low temperature. This happens because the carriers are randomly distributed in the localized potential minima at low temperature.…”

Section: -3contrasting

confidence: 89%

“…The detailed data can be found in the literature. [20] The appearance of high-In content phase has been reported in InGaN film under Ga-rich condition, [7] and could result in some interesting optical behaviors. The content of indium was estimated to be about 17% based on XRD and PL spectroscopy.…”

Section: Samples and Experimental Techniquesmentioning

confidence: 98%

“…Therefore, the PL decay curves is actually the component of spontaneous emission. [20] All of the decay curves exhibit mono-exponential rise and decay processes, and an exponential decay function I = I exp(−t/τ) convoluted with the IRF is used to fit the curves 057802-4 to obtain the lifetime. The PL lifetime for both emissions decreases with increasing temperature, especially at a temperature about T = 40 K. At a temperature about 40 K, the delocalization induced by thermal activation and carrier transfer takes place, thus leading to the decrease of lifetime, which is consistent with the anomalous S-shape behavior of the PL peak above.…”

Section: -3mentioning

confidence: 99%

“…A detailed analysis and discussion of this point has been given in our previous published paper. [20]…”

Section: -3mentioning

confidence: 99%

“…We have reported carrier thermalization under stimulated emission in InGaN epitaxial layer at room temperature. [20] Here, we mainly focused on the studies of the carrier transfer between SE and SPE, and also among different localized states by measuring the temperature dependent PL, and time resolved PL. Stimulated emission at about 430 nm dominated the PL spectrum in the In-rich InGaN film at low temperature.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Temperature and excitation dependence of stimulated emission and spontaneous emission in InGaN epilayer*

Shang

et al. 2019

Chinese Phys. B

View full text Add to dashboard Cite

Temperature and excitation dependent photoluminescence (PL) of InGaN epilayer grown on c-plane GaN/sapphire template by molecular beam epitaxy (MBE) has been systematically investigated. The emission spectra of the sample consisted of strong multiple peaks associated with one stimulated emission (SE) located at 430 nm and two spontaneous emissions (SPE) centered at about 450 nm and 480 nm, indicating the co-existence of shallow and deep localized states. The peak energy of SE exhibiting weak s-shaped variation with increasing temperature revealed the localization effect of excitons. Moreover, an abnormal increase of the SPE intensity with increasing temperature was also observed, which indicated that the carrier transfer between the shallow and deeper localized states exists. Temperature dependent time-resolved PL (TRPL) demonstrated the carrier transfer processes among the localized states. In addition, a slow thermalization of hot carriers was observed in InGaN film by using TRPL and transient differential reflectivity, which is attributed to the phonon bottleneck effect induced by indium aggregation.

show abstract

Section: -3contrasting

confidence: 89%

Section: Samples and Experimental Techniquesmentioning

confidence: 98%

Section: -3mentioning

confidence: 99%

“…A detailed analysis and discussion of this point has been given in our previous published paper. [20]…”

Section: -3mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Temperature and excitation dependence of stimulated emission and spontaneous emission in InGaN epilayer*

Shang

et al. 2019

Chinese Phys. B

View full text Add to dashboard Cite

show abstract

Field dependent ultrafast carrier dynamics in InGaN/GaN p-i(MQW)-n structure

Shang

et al. 2020

Superlattices and Microstructures

View full text Add to dashboard Cite

Electric-field driven photoluminescence probe of photoelectric conversion in InGaN-based photovoltaics

et al. 2018

View full text Add to dashboard Cite

The spatial distribution of electric field in photovoltaic multiple quantum wells (MQWs) is extremely important to dictate the mutual competition of photoelectric conversion and optical transition. Here, electric-field-driven photoluminescence (PL) in both steady-state and transient-state has been utilized to directly investigate the internal photoelectric conversion processes in InGaN-based MQW photovoltaic cell. As applying the reversed external electric field, the compensation of the quantum confined stark effect (QCSE) in InGaN QW is beneficial to help the photoabsorbed minor carriers drift out from the localized states, whereas extremely weakening the PL radiative recombination. A directly driven force by the reversed external electric field decreases the transit time of photocarriers drifting in InGaN QW. And hence, the overall dynamic PL decay including both the slow and fast processes gradually speeds up from 19.2 ns at the open-circuit condition to 3.9 ns at a negative bias of -3 V. In particular, the slow PL decay lifetime declines more quickly than that of the fast one. It is the delocalization of photocarriers by electric-field drift that helps to further enhance the high-efficiency photoelectric conversion except for the tunneling transport in InGaN-based MQW photovoltaics. Therefore, it can be concluded that the electric-field PL probe may provide a direct method for evaluating the photoelectric conversion in multilayer quantum structures and related multijunction photovoltaic cells.

show abstract

Carrier thermalization under stimulated emission in In0.17Ga0.83N epilayer at room temperature

Cited by 3 publications

References 20 publications

Temperature and excitation dependence of stimulated emission and spontaneous emission in InGaN epilayer*

Temperature and excitation dependence of stimulated emission and spontaneous emission in InGaN epilayer*

Field dependent ultrafast carrier dynamics in InGaN/GaN p-i(MQW)-n structure

Electric-field driven photoluminescence probe of photoelectric conversion in InGaN-based photovoltaics

Contact Info

Product

Resources

About