Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International
DOI: 10.1109/icimw.2004.1422111
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Carriers dynamics measurements in ultrafast photoconductive switches for THz applications

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Cited by 3 publications
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“…The carrier dynamics of LT-GaAs:Be have been investigated. The contribution of free holes is seen to extend the lifetime to hundreds of picoseconds [9,10]. The application of a LTG-GaAs:Be layer has been found to enhance THz emission relative to emitters without a layer or with only an undoped LTG-GaAs layer [11].…”
Section: Introductionmentioning
confidence: 99%
“…The carrier dynamics of LT-GaAs:Be have been investigated. The contribution of free holes is seen to extend the lifetime to hundreds of picoseconds [9,10]. The application of a LTG-GaAs:Be layer has been found to enhance THz emission relative to emitters without a layer or with only an undoped LTG-GaAs layer [11].…”
Section: Introductionmentioning
confidence: 99%
“…Lowtemperature-grown (LTG) GaAs:Be [6] has been shown to be a stronger SF THz emitter than undoped LTG-GaAs [7]. Carrier lifetimes in LT-GaAs:Be have been shown to be increased by the presence of free holes [8]. Strained layers of GaAsN:Be act as THz emitters in high electric fields [9].…”
Section: Introductionmentioning
confidence: 99%
“…The presence of free holes has been observed to increase lifetimes to the order of hundreds of picoseconds. 13,14 Adding a layer of LTG-GaAs:Be has been shown to enhance the THz emission of undoped LTG-GaAs material. 15 At low temperatures and under strong electric fields, strained GaAsN:Be layers emit THz radiation.…”
Section: Introductionmentioning
confidence: 99%