Time-domain THz spectroscopy using acceptor-doped GaAs photoconductive emitters

Schoenherr, D.; Hartnagel, H.L.; Hargreaves, Stuart; Lewis, R. A.; Henini, M.

doi:10.1088/0268-1242/23/10/105012

Cited by 6 publications

(4 citation statements)

References 26 publications

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“…For instance, the application of an external electric bias to the semiconductor surface with a photolithographically grown photoconductive switch, 2,3 or with simple silver paint contacts, 4,5 results in a terahertz electric field in the surface plane, parallel to the bias field, as above-bandgap optical pulses generate free carriers which are in turn accelerated by the bias field. Photoconductive emitters are most commonly employed in a straight-through transmission geometry.…”

Section: Introductionmentioning

confidence: 99%

Bulk and surface field-induced optical rectification from(11N)zincblende crystals in a quasireflection geometry

2011

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In a previous article, we presented a generalized expression for second-order bulk and third-order surfacefield-induced optical rectification for zincblende43m crystal faces with arbitrary Miller indices (hkl) along with experimental data for (11N )A and (11N )B GaAs in transmission geometry. We now expand the results to quasireflection geometry, with angles of incidence and detection of 45• . While this geometry introduces a p-polarized signal component due to mechanisms other than optical rectification, such as photocarrier acceleration by the surface depletion field, the azimuthal angle dependence of the optical rectification component yields further insight into the crystallographic orientation and surface properties of the sample.

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Section: Introductionmentioning

confidence: 99%

Bulk and surface field-induced optical rectification from(11N)zincblende crystals in a quasireflection geometry

2011

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“…Photoconductivity measurements reveal much systematic detail about the carrier dynamics and internal electrical fields in the emitter material [6]. In practice, photoconductive emitters are very efficient and so widely used.…”

Section: Introduction 1thz -A New Way Of Seeingmentioning

confidence: 99%

Optical rectification for terahertz generation

Lee

Lewis

2011

Phys. Status Solidi C

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The applications of terahertz‐frequency electromagnetic radiation are growing rapidly, driven by developments in sources, detectors and optics suited to the THz‐frequency region. Much of the advance is in the field of THz time‐domain spectroscopy in which ultrashort pulses of near‐infrared radiation are used in a pulse‐probe arrangement to realise both the emission and detection of the THz radiation. Methods for ultrafast THz pulse generation include photoconductivity, transient currents or optical rectification. While optical rectification has been known for some time, earlier theoretical and experimental results have been limited to simple crystallographic directions. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…The first to be widely exploited was the photoconductivity ͑PC͒ mechanism, technologically realized by applying an external potential to a semiconductor surface via an appropriate electrode structure, such as an "Auston switch," 3 strip-line antenna, 4 logarithmic-periodic antenna, 5 or Ag-paint dots. 6,7 The PC mechanism will not be discussed further. Turning now to mechanisms that do not involve electrodes on the sample, these may be separated into two main classes: transient current ͑TC͒ mechanisms and optical rectification ͑OR͒.…”

Section: Introductionmentioning

confidence: 99%