Catalytic Preparation of Si3N4-Bonded SiC Refractories and Their High-Temperature Properties

Liang, Feng; Zhao, Wanguo; Lu, Lanlan; Zhang, Haijun; Bi, Yingpu; Zhang, Jun; Liu, Jianghao; Zhang, Shaowei

doi:10.1007/s11661-018-4984-6

Cited by 17 publications

(3 citation statements)

References 21 publications

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“…So the formation of Si 2 N 2 O can facilitate the overall nitriding process and making the whole process kinetically possible. 41,42 According to the previous analysis, the effect of Y 2 O 3 additive on nitriding of DWSCW can be explained in detail, as shown in Figure 9. In the sample without additive, the native SiO 2 film of DWSCW cannot be disrupted through reactions ( 2)-( 4) when the temperature below 1300 • C; therefore, the nitrogen cannot react with silicon.…”

Section: Resultsmentioning

confidence: 97%

“…Besides, the partial pressure of accordingly generated O 2 will decrease to an extremely low level through the facile formation of SiO 2 by the sufficient SiO by reaction (7), the Si 3 N 4 generated can react with SiO 2 layers and then promote the nitridation like chain reaction by reaction (8), and thus shifting reactions (5) and (6) to the right. So the formation of Si 2 N 2 O can facilitate the overall nitriding process and making the whole process kinetically possible 41,42 …”

Section: Resultsmentioning

confidence: 99%

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Effect of Y₂O₃additive on nitridation of diamond wire silicon cutting waste

Wang

Xing

2022

Int J Applied Ceramic Tech

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The effect of Y 2 O 3 additive on the nitridation of diamond wire silicon cutting waste (DWSCW) was studied by using X-ray diffraction, thermo gravimetry, differential thermal analysis, scanning electron microscope equipped with energy-dispersive spectrometry, and an equivalent alternative method, and the individual particles of DWSCW were simulated using cubic polycrystalline silicon blocks. The results showed that the native SiO 2 film on the surface of DWSCW can be disrupted at low temperature (1300 • C) by adding Y 2 O 3 additive, which provide good channels for the diffusion of SiO and N 2 and improve the overall conversion of DWSCW. Y 2 O 3 additive can also reduce the initial nitriding temperature of cutting waste, change the nitriding kinetic behavior, and promote the formation of β-Si 3 N 4 through accelerating the nitridation of cutting waste at high temperature (≥1500 • C). In addition, when 8 wt% Y 2 O 3 additive is added to the cutting waste, the complete nitridation is achieved, at 1350 • C, and ω α + ω β reaches a maximum of 83.6 wt%.

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Section: Resultsmentioning

confidence: 97%

Section: Resultsmentioning

confidence: 99%

Effect of Y₂O₃additive on nitridation of diamond wire silicon cutting waste

Wang

Xing

2022

Int J Applied Ceramic Tech

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“…Figure 3 DFT calculation is carried out on the charge transfer, bond length and adsorption energy of gaseous molecules in the system at various states. Different from the DFT calculation for the nitridation of silicon in other literature, 27 the SiO molecule is also considered together with the N 2 molecule. Figure 4 shows the corresponding DFT calculation results.…”

Section: Preparation Of Si 3 N 4 -Si 2 N 2 O Composite Powdermentioning

confidence: 99%

Effect of Fe₂O₃ additive on the preparation of Si₃N₄−Si₂N₂O composite ceramics via diamond‐wire saw silicon waste

Fang

Sun

et al. 2023

Int J Applied Ceramic Tech

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In this study, Si3N4−Si2N2O composite ceramics were prepared through a two‐step combination of the direct nitriding method and spark plasma sintering method with diamond‐wire saw silicon waste in the photovoltaic industry as raw material. The whole holding time at the constant temperature of the preparing process only lasts 35 min, in which the nitriding time only takes 30 min and the sintering time only takes 5 min. The effects of the Fe2O3 additive on the nitriding and sintering process were investigated in detail. The results show that the Fe2O3 additive accelerates the nitriding process by promoting the formation and diffusion of the gas phase and reducing the apparent activation energy of the reaction between the gas phase containing silicon and N2. Meanwhile, the Fe2O3 additive also promotes the sintering process by lowering the eutectic temperature of the SiO2−Al2O3 and the SiO2−Y2O3 binary system. The optimal technical parameters follow the nitriding temperature of 1400°C, the nitriding time of 30 min, the sintering temperature of 1800°C, and the sintering time of 5 min. The Si3N4−Si2N2O composite ceramic prepared under the above conditions exhibits good performance with an apparent porosity of 2.7%, Vickers hardness of 16.54 GPa, and fracture toughness of 4.1 MPa·m1/2.

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Effects of Temperature and Si3N4 Diluent on Nitriding of Diamond Wire Silicon Cutting Waste

Wang

Zhuang

Xing

2022

Silicon

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Catalytic Preparation of Si3N4-Bonded SiC Refractories and Their High-Temperature Properties

Cited by 17 publications

References 21 publications

Effect of Y₂O₃additive on nitridation of diamond wire silicon cutting waste

Effect of Y₂O₃additive on nitridation of diamond wire silicon cutting waste

Effect of Fe₂O₃ additive on the preparation of Si₃N₄−Si₂N₂O composite ceramics via diamond‐wire saw silicon waste

Effects of Temperature and Si3N4 Diluent on Nitriding of Diamond Wire Silicon Cutting Waste

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Catalytic Preparation of Si3N4-Bonded SiC Refractories and Their High-Temperature Properties

Cited by 17 publications

References 21 publications

Effect of Y2O3additive on nitridation of diamond wire silicon cutting waste

Effect of Y2O3additive on nitridation of diamond wire silicon cutting waste

Effect of Fe2O3 additive on the preparation of Si3N4−Si2N2O composite ceramics via diamond‐wire saw silicon waste

Effects of Temperature and Si3N4 Diluent on Nitriding of Diamond Wire Silicon Cutting Waste

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Product

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Effect of Y₂O₃additive on nitridation of diamond wire silicon cutting waste

Effect of Y₂O₃additive on nitridation of diamond wire silicon cutting waste

Effect of Fe₂O₃ additive on the preparation of Si₃N₄−Si₂N₂O composite ceramics via diamond‐wire saw silicon waste