Cation-Regulated Transformation for Continuous Two-Dimensional Tin Monosulfide

Abstract

The synthesis of a continuous and high-quality large-area layer is a key research area in the field of two-dimensional (2D) metal chalcogenides. To date, several techniques, including chemical vapor deposition and sulfurization/ selenization, have been proposed for the synthesis of 2D metal chalcogenides. These techniques are based on the substitutional reaction of anions, that is, replacement of oxygen with chalcogen elements. This study uses a new approach based on cation-regulated transformation. An SnS 2 layer, a parent material, is grown by atomic layer deposition, followed by reaction with bis(1-dimethlamino-2-methyl-2-propoxy)tin(II) at a temperature of 270 °C to form SnS. The reaction occurs predominantly along grain boundaries. The transformation self-terminates once the pregrown SnS 2 is completely consumed. The devices utilizing the transformed layers, such as gas sensors and thin-film transistors, exhibit a p-type behavior, supporting full transformation of n-type SnS 2 into p-type SnS. Consequently, complete transformation into a continuous and single-phase SnS layer is demonstrated by the cation-regulated transformation approach. This approach provides possibilities to expand approaches to the synthesis of more diverse 2D metal chalcogenides and the modulation of their properties.

In-Plane Ferroelectric Tin Monosulfide and Its Application in a Ferroelectric Analog Synaptic Device

“…SnS ultrathin films were generated by thermal disproportionation of SnS 2 grown by CVD, as depicted in Figure S1 . SnS 2 and SnS films can be synthesized by CVD on arbitrary substrates, as shown in Figure a.…”

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

“…It is also worth noting that n‐type SnS 2 can be rather easily transformed into p‐type 2D SnS and vice versa, which can be beneficial for fabrication of CMOS devices. [ 289,316,317 ]…”

Cross-linked structure of self-aligned p-type SnS nanoplates for highly sensitive NO2 detection at room temperature

“…We previously reported the ALD processing of layer-structured α-SnS from bis(1-dimethylamino-2-methyl-2-propoxy)tin( ii ) (Sn(dmamp) 2 ) and H 2 S, 31–33 where the process led to the evolution of non-continuous layers composed of randomly orientated SnS nanoplates. 31 Such morphology resulted from the strong anisotropic adsorption of the precursors depending on the crystal planes.…”