CD reference materials for sub-10th μm applications

Cresswell, Michael W.; Bogardus, E. Hal; Pinillos, Joaquin V Martinez de; Bennett, Marylyn Hoy; Allen, Richard A.; Guthrie, William F.; Murabito, Christine E.; Ende, Barbara Anne am; Linholm, L.W.

doi:10.1117/12.473450

Cited by 10 publications

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“…Both NIST (NMI in the US) and PTB (NMI in Germany) have made significant efforts in dimensional nanometrology that rely on this approach. The NIST Single Crystal Critical Dimension Reference Material project was a multigenerational effort to develop standards for linewidth measurements below 100 nm [6,[41][42][43][44]. The purpose of this project was to establish traceable linewidth measurements for specific crystalline Si nanostructures.…”

Section: Transmission Electron Microscopementioning

confidence: 99%

Research Activities of Nanodimensional Standards Using Atomic Force Microscopes, Transmission Electron Microscope, and Scanning Electron Microscope at the National Metrology Institute of Japan

et al. 2021

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With the progress in nanotechnology, the importance of nanodimensional standards is increasing. Realizing nanodimensional standards requires multiple types of high-precision microscopy techniques. The National Metrology Institute of Japan (NMIJ), one of the research domains in the National Institute of Advanced Industrial Science and Technology (AIST), is developing nanodimensional standards using atomic force, transmission electron, and scanning electron microscopes. The current status of nanodimensional standards in NMIJ is introduced herein.

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Section: Transmission Electron Microscopementioning

confidence: 99%

Research Activities of Nanodimensional Standards Using Atomic Force Microscopes, Transmission Electron Microscope, and Scanning Electron Microscope at the National Metrology Institute of Japan

et al. 2021

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“…This allowed the true width of the structure to be determined and then the CD-AFM measurements of all the structures could be compensated based on the difference between the CD-AFM and TEM measurements of the same structure. Using this approach, the measurement uncertainty has been reduced to below 2 nm (k = 2) with the uncertainty associated with the TEM-CD-AFM experiment 0.6 nm a (k = 2) [102][103][104][105][106].…”

Section: Secondary Methods Of Realizing the Metre For Dimensional Nanometrologymentioning

confidence: 99%

The new mise en pratique for the metre—a review of approaches for the practical realization of traceable length metrology from 10⁻¹¹ m to 10¹³ m

2021

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The revised International System of Units (SI) came into force on May 20, 2019. Simultaneously, updated versions of supporting documents for the practical realization of the SI base units (mises en pratique) were published. This review paper provides an overview of the updated mise en pratique for the SI base unit of length, the metre, that now gives practical guidance on realisation of traceable length metrology spanning 24 orders of magnitude. The review begins by showing how the metre may be primarily realized through time of flight and interferometric techniques using a variety of types of interferometer. Examples of techniques for measuring the interferometric phase and coping when the integer interference order is unknown are then described, together with examples of typical uncertainty contributions that may be encountered. The requirements for traceable nanoscale metrology and the need for an alternative secondary metre as identified by the Consultative Committee for Length’s Working Group on Nanometrology are outlined. These led to the inclusion in the mise en pratique of secondary realisations of the length unit at the nanometre and sub nanometre scale, based on the lattice spacing of silicon. Three measurement techniques using this secondary realisation are then described in detail. The paper concludes by emphasising that measurements made today over 24 order of magnitude are still compatible with measurements made using the metre as adopted over 200 years ago.

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“…[2][3][4][5][8][9][10][11] This history includes several developmental releases prior to the 2004 release to the SEMATECH Member Companies. While there have been some differences in the material and process throughout this evolution, the use of selective etching on (110) Si has always been at the core.…”

Section: Sccdrm Process Optimization Experimentsmentioning

confidence: 99%

Single crystal critical dimension reference materials (SCCDRM): process optimization for the next generation of standards

et al. 2007

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Critical dimension atomic force microscopes (CD-AFMs) are rapidly gaining acceptance in semiconductor manufacturing metrology. These instruments offer non-destructive three dimensional imaging of structures and can provide a valuable complement to critical dimension scanning electron microscope (CD-SEM) and optical metrology. Accurate CD-AFM metrology, however, is critically dependent upon calibration of the tip width. In response to this need, NIST has developed prototype single crystal critical dimension reference materials (SCCDRMs).In 2004, a new generation of SCCDRMs was released to the Member Companies of SEMATECH -a result of the fruitful partnership between several organizations. These specimens, which are fabricated using a lattice-plane-selective etch on (110) silicon, exhibit near vertical sidewalls and high uniformity and can be used to calibrate CD-AFM tip width to a standard uncertainty of about ± 1 nm.Following the 2004 release, NIST began work on the "next generation" of SCCDRM standards. A major goal of this thrust was to improve upon the SCCDRM characteristics that impact user-friendliness: the linewidth uniformity and cleanliness. Toward this end, an experiment was designed to further optimize the process conditions. The first round of this experiment was recently completed, and the results show great promise for further improvement of the SCCDRM manufacturing process.Among other observations, we found that the minimum linewidth and linewidth uniformity were primarily sensitive to different factors -and can thus be independently tuned to meet our future goals -which include linewidths as small as 20 nm and a standard uncertainty due to non-uniformity at the ± 0.5 nm level. Our future work will include a new refining experiment to further optimize the important factors that we have identified, and extension of the methodology to a monolithic 200 mm implementation.

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CD reference materials for sub-10th μm applications

Cited by 10 publications

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Research Activities of Nanodimensional Standards Using Atomic Force Microscopes, Transmission Electron Microscope, and Scanning Electron Microscope at the National Metrology Institute of Japan

Research Activities of Nanodimensional Standards Using Atomic Force Microscopes, Transmission Electron Microscope, and Scanning Electron Microscope at the National Metrology Institute of Japan

The new mise en pratique for the metre—a review of approaches for the practical realization of traceable length metrology from 10⁻¹¹ m to 10¹³ m

Single crystal critical dimension reference materials (SCCDRM): process optimization for the next generation of standards

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CD reference materials for sub-10th μm applications

Cited by 10 publications

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Research Activities of Nanodimensional Standards Using Atomic Force Microscopes, Transmission Electron Microscope, and Scanning Electron Microscope at the National Metrology Institute of Japan

Research Activities of Nanodimensional Standards Using Atomic Force Microscopes, Transmission Electron Microscope, and Scanning Electron Microscope at the National Metrology Institute of Japan

The new mise en pratique for the metre—a review of approaches for the practical realization of traceable length metrology from 10−11 m to 1013 m

Single crystal critical dimension reference materials (SCCDRM): process optimization for the next generation of standards

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The new mise en pratique for the metre—a review of approaches for the practical realization of traceable length metrology from 10⁻¹¹ m to 10¹³ m