CdO epitaxial layers grown on (0 0 1) GaAs surfaces by metalorganic molecular-beam epitaxy

Ashrafi, Almamun; Kumano, H.; Suemune, I.; Ok, Young-Woo; Seong, T. Y.

doi:10.1016/s0022-0248(01)01956-x

Cited by 17 publications

(12 citation statements)

References 9 publications

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“…If the films are grown on r-plane sapphire, the FWHM values are independent of the studied reflection with values between 0.13º and 0.14º being typically measured. These rocking curves are better than those measured on CdO single crystalline films grown on GaAs [20], and as narrow as those recorded on films grown on MgO substrates [19], which showed until now the lowest widths values.…”

Section: Cdo Films On R-and M-plane Sapphirecontrasting

confidence: 54%

“…On the other hand, due to its application as transparent conducting oxide in solar cells or flat-plane displays, CdO has usually been deposited as polycrystalline films onto glass and Si substrates. It is not until recent years that an interest on growing CdO on other substrates has raised, so that good quality films have been obtained on MgO(111) [18] and GaAs(001) [19,20]. The films were deposited by pulsed laser deposition and metalorganic molecular beam epitaxy respectively, techniques that allowed rocking curve full width at half maximum (FWHM) values in the order of 0.13º [18] and 0.55º [20] to be achieved.…”

Section: Introductionmentioning

confidence: 99%

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X‐ray characterization of CdO thin films grown on a ‐, c ‐, r ‐ and m ‐plane sapphire by metalorganic vapour phase‐epitaxy

Zúñiga‐Pérez

Martı́nez-Tomás

Muñoz‐Sanjosé

2005

phys. stat. sol. (c)

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. Ct, 81.05.Dz, 81.15.Gh CdO thin films have been grown on a-plane (11 2 0), c-plane (0001), r-plane (01 1 2) and m-plane (10 1 0) sapphire substrates by metalorganic vapour-phase epitaxy (MOVPE). The effects of different substrate orientations on the structural properties of the films have been analyzed by means of X-ray diffraction, including θ-2θ scans, pole figures and rocking curves. (111), (001) and (110) orientations are found on a-, r-, and m-sapphire respectively, while films deposited on c-plane exhibit an orientation in which no low-index crystal plane is parallel to the sample surface. The recorded pole figures have allowed determining the epitaxial relationships between films and substrates, as well as the presence or absence of extended defects. The rocking curves indicate that high quality thin films, in terms of tilt and twist, can be obtained on r-, c-and m-plane sapphire, while further improvement is needed over the a-orientation.

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Section: Cdo Films On R-and M-plane Sapphirecontrasting

confidence: 54%

Section: Introductionmentioning

confidence: 99%

X‐ray characterization of CdO thin films grown on a ‐, c ‐, r ‐ and m ‐plane sapphire by metalorganic vapour phase‐epitaxy

Zúñiga‐Pérez

Martı́nez-Tomás

Muñoz‐Sanjosé

2005

phys. stat. sol. (c)

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“…Nevertheless, recent attempts to obtain layers with improved properties have lead to the growth of CdO thin films on MgO(1 1 1) and GaAs(0 0 1) substrates [2,16,17]. In the first case an excellent structural quality was achieved, as revealed by a FWHM of the rocking curve of only 0.131 [2], but no study on the strain state of the films was performed.…”

Section: Introductionmentioning

confidence: 99%

Structural analysis of CdO layers grown on r-plane sapphire (011¯2) by

Zúñiga‐Pérez

Munuera

Ocal

et al. 2004

Journal of Crystal Growth

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“…The ternary alloy Cd x Zn 1Àx O is a potential candidate material, because of the smaller direct bandgap of CdO of 2.3 eV. 55,56 Figure 2 summarizes the experimental energy bandgap data currently available for Cd x Zn 1Àx O.…”

Section: The Zno Materials Systemmentioning

confidence: 99%

Numerical Simulation of ZnO-Based Terahertz Quantum Cascade Lasers

Bellotti

Paiella

2010

Journal of Elec Materi

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In this work, a particle-based Monte Carlo model is used to quantify the potential of terahertz sources based on the ZnO-based material system relative to existing devices based on GaAs/AlGaAs quantum wells. Specifically, two otherwise identical quantum cascade structures based on ZnO/ MgZnO and GaAs/AlGaAs quantum wells are designed, and their nonequilibrium carrier distributions are then computed as a function of temperature. The simulation results show that, because of their larger optical phonon energy, ZnO/MgZnO quantum cascade laser structures exhibit weaker temperature dependence of the population inversion than in the case of similar structures made of GaAs/AlGaAs. In particular, as the temperature is increased from 10 K to 300 K, population inversion is found to decrease by a factor of 4.48 and 1.50 for the AlGaAs and MgZnO structure, respectively. Based on these results, the MgZnO devices are then predicted to be, in principle, capable of laser action without cryogenic cooling.

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CdO epitaxial layers grown on (0 0 1) GaAs surfaces by metalorganic molecular-beam epitaxy

Cited by 17 publications

References 9 publications

X‐ray characterization of CdO thin films grown on a ‐, c ‐, r ‐ and m ‐plane sapphire by metalorganic vapour phase‐epitaxy

X‐ray characterization of CdO thin films grown on a ‐, c ‐, r ‐ and m ‐plane sapphire by metalorganic vapour phase‐epitaxy

Structural analysis of CdO layers grown on r-plane sapphire (011¯2) by

Numerical Simulation of ZnO-Based Terahertz Quantum Cascade Lasers

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