Challenges and Solutions of Replacement Metal Gate Patterning to Enable Gate-all-Around Device Scaling

Oniki, Yusuke; Ragnarsson, L.-Å.; Iino, Hideaki; Cott, Daire; Chan, Boon Teik; Sebaai, Farid; Hopf, T.; Dekkers, Harold; Litta, E. Dentoni; Sánchez, Efrain Altamirano; Holsteyns, Frank; Horiguchi, N.

doi:10.4028/www.scientific.net/ssp.314.119

Cited by 6 publications

(1 citation statement)

References 14 publications

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“…In the high-k metal gate (HKMG) of logic and memory periphery transistors, rare earth and some alkaline earth metals or their oxides, e.g. lanthanum oxide (La2O3) and magnesium oxide (MgO) have been proposed as a zero-thickness work function (WF) shifter [1][2][3][4][5]. However, the wet processing of such new materials is quite challenging because they easily dissolve in water, for example for La2O3 it was shown that a good control of the pH plays a key role to control its dissolution [6].…”

Section: Introductionmentioning

confidence: 99%

Study on Alternative Dipole Material Wet Clean by pH Controlled Functional Water

Tanaka

Gan

Ogawa

et al. 2023

SSP

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Section: Introductionmentioning

confidence: 99%

Study on Alternative Dipole Material Wet Clean by pH Controlled Functional Water

Tanaka

Gan

Ogawa

et al. 2023

SSP

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Investigation of dual work function metal (DWFM) gate stacks with ALD TaAlN and TaAlC for multi threshold voltages (VTHs) engineering in MOS device integration

Choi,

Sim,

Kim

et al. 2024

Materials Science in Semiconductor Processing

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Atomic-Layer-Deposited Al₂O₃ Layer Inserted in SiO₂/HfO₂ Gate-Stack-Induced Positive Flat-Band Shift with Dual Interface Dipoles for Advanced Logic Device

Lv,

Shen,

et al. 2024

ACS Appl. Nano Mater.

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Al 2 O 3 has been widely studied as an interface dipole inducer, but a deeper understanding of the physical mechanisms behind is still needed. In our work, using optimized in situ thermal atomic layer deposition (ALD), metal-oxide semiconductor (MOS) capacitors with different Al 2 O 3 thicknesses were prepared. Through X-ray photoelectron spectroscopy (XPS) analysis, interface band alignments can be extracted before and after the Al 2 O 3 dipole layer (DL) was inserted. The shift of valence band offset (ΔVBO) is determined to be 0.41 and 0.48 eV with 10-and 30-cycle Al 2 O 3 DL, respectively. More detailed XPS results indicate that the dipole formed at SiO 2 /Al 2 O 3 plays a dominating role benefiting the desired positive flat-band voltage (V FB ) shift, while conversely, the dipole at Al 2 O 3 /HfO 2 has an opposite effect minorly. Tested capacitance−voltage (C−V) curves show that a 0.86 nm (10 cycles) Al 2 O 3 DL can induce a 330 mV positive V FB shift which increases and eventually saturates with increasing Al 2 O 3 DL thickness. Using the parallel conductance method, the interface trap density (D it ) of each device was all calculated within 3.5 × 10 11 eV −1 cm −2 with a small hysteresis window. This work achieves a low D it and a large stable positive V FB shift through in situ ALD Al 2 O 3 dipole first process. The VBO characterization of DL interfaces reveals a clear physical mechanism to deeply understand the V FB shift in interface dipole engineering (IDE).

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Challenges and Solutions of Replacement Metal Gate Patterning to Enable Gate-all-Around Device Scaling

Cited by 6 publications

References 14 publications

Study on Alternative Dipole Material Wet Clean by pH Controlled Functional Water

Study on Alternative Dipole Material Wet Clean by pH Controlled Functional Water

Investigation of dual work function metal (DWFM) gate stacks with ALD TaAlN and TaAlC for multi threshold voltages (VTHs) engineering in MOS device integration

Atomic-Layer-Deposited Al₂O₃ Layer Inserted in SiO₂/HfO₂ Gate-Stack-Induced Positive Flat-Band Shift with Dual Interface Dipoles for Advanced Logic Device

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Challenges and Solutions of Replacement Metal Gate Patterning to Enable Gate-all-Around Device Scaling

Cited by 6 publications

References 14 publications

Study on Alternative Dipole Material Wet Clean by pH Controlled Functional Water

Study on Alternative Dipole Material Wet Clean by pH Controlled Functional Water

Investigation of dual work function metal (DWFM) gate stacks with ALD TaAlN and TaAlC for multi threshold voltages (VTHs) engineering in MOS device integration

Atomic-Layer-Deposited Al2O3 Layer Inserted in SiO2/HfO2 Gate-Stack-Induced Positive Flat-Band Shift with Dual Interface Dipoles for Advanced Logic Device

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Product

Resources

About

Atomic-Layer-Deposited Al₂O₃ Layer Inserted in SiO₂/HfO₂ Gate-Stack-Induced Positive Flat-Band Shift with Dual Interface Dipoles for Advanced Logic Device