Changes of Acceptor Absorption Spectra in Zn3P2 Due to Heat Treatments

Sujak-Cyrul, B.; Misiewicz, J.

doi:10.1002/pssa.2211030149

Cited by 2 publications

(1 citation statement)

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“…Moreover, Zn 3 P 2 can also be prepared by an evaporation method, and N a in Zn 3 P 2 can be controlled by annealing in the phosphorus atmosphere. 32,33) Therefore, Zn 3 P 2 is one of the options for a p-type emitter layer in heterojunction BaSi 2 thin film solar cells. Ultimately, the J-V characteristics of a p-type Zn 3 P 2 =n-type BaSi 2 solar cell with a BSF layer and the cell structure are shown in Fig.…”

Section: Selection Of a P-type Materialsmentioning

confidence: 99%

Investigation of p-type emitter layer materials for heterojunction barium disilicide thin film solar cells

Takahashi

Nakagawa

Hara

et al. 2017

Jpn. J. Appl. Phys.

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To achieve heterojunction thin film solar cells with high conversion efficiency using BaSi2 as a photoabsorption layer, we investigated the effects of electron affinity (χ) and the band gap (Eg) of a p-type semiconductor on the performance of BaSi2 thin film solar cells with a one-dimensional device simulator, Afors-HET ver. 2.5. By simulation, we found that χ should be less than 3.5 eV and Eg should be in the range of 1.5–2.5 eV to achieve a conversion efficiency of more than 20% in the case of p-type semiconductor/n-type BaSi2 active layer/n++-type BaSi2/electrode. Ultimately, we selected Zn3P2 (Eg = 1.5 eV, χ = 3.2 eV) and SnS (Eg = 1.3 eV, χ = 3.6 eV) as options for p-type materials. In particular, Zn3P2 maintains high efficiency even if a very thin oxide layer exists at the pn heterointerface. The highest conversion efficiency of p-type Zn3P2/n-type BaSi2 thin film solar cells was 23.17% without any light-trapping structure.

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Section: Selection Of a P-type Materialsmentioning

confidence: 99%