Characteristics of in situ deposited GaAs metal-insulator-semiconductor structures

Si3N4/Si/In0.05Ga0.95As/n–GaAs metal–insulator–semiconductor devices

“…The trap density was low enough to yield unpinned Fermi level in the GaAs MIS. 12,13 In a separate effort In 0.53 Ga 0.47 As/InP-based MIS structures exhibited the minimum interface trap density on the order of 2ϫ10 11 eV Ϫ1 cm Ϫ2 . 14 X-ray photoelectron spectroscopy ͑XPS͒ measurements demonstrated that the surface Fermi level of In 0.53 Ga 0.47 As/InP-based MIS structures is not indeed pinned.…”

“…However, the shift in the Si 3 N 4 /Si/Ge/GaAs structures is negligible. 13 Further investigation on this topic is in progress. Figure 3͑a͒ exhibits C -V characteristics of 150-Å-thick In 0.05 Ga 0.95 As channel on GaAs.…”

“…14 The optimum thickness of the Si interlayer for the best capacitance-voltage ͑C-V͒ characteristics in the Si 3 N 4 /Si/GaAs capacitor was shown to be about 10 Å. 12,13 Scanning tunneling microscopy ͑STM͒ also confirmed uniform surface coverage of 10-Å-thick Si grown on GaAs. 12 Minimum interface trap density D it ϳ10 11 eV Ϫ1 cm Ϫ2 was obtained for Si 3 N 4 /Si/GaAs or Si 3 N 4 /Si/Ge/GaAs MIS struc-tures.…”

“…5,[10][11][12][13][14] Pseudomorphic silicon cap layers deposited on GaAs were reported to unpin the surface Fermi energy 10,15 and reduce the density of tunneling-related traps. 14 The optimum thickness of the Si interlayer for the best capacitance-voltage ͑C-V͒ characteristics in the Si 3 N 4 /Si/GaAs capacitor was shown to be about 10 Å.…”