Characteristics of metalorganic remote plasma chemical vapor deposited Al2O3 gate stacks on SiC metal–oxide–semiconductor devices

Abstract

Metalorganic remote plasma chemical vapor deposited SiO2/Al2O3 stacks were deposited on 6H p-type silicon SiC to fabricate a high-k gate stack SiC metal–oxide–semiconductor capacitors. Capacitance–voltage (C–V) and current–voltage (I–V) measurements were performed. C–V characteristics showed excellent properties at room and higher temperatures. Samples exhibited a slight negative flatband shift from which the net oxide charge (Qox) was calculated. Low leakage currents were observed even at high temperatures. I–V characteristics of Al2O3 were superior to those observed on AlN and SiO2 dielectrics on SiC.

Leakage current and charge trapping behavior in TiO2∕SiO2 high-κ gate dielectric stack on 4H-SiC substrate

“…13 Nevertheless, so far there are only few scientific reports on high-gate dielectrics on SiC for high power devices. [13][14][15][16] In this study, we report leakage current and charge trapping behavior in TiO 2 / SiO 2 high-gate dielectric stack on 4H-SiC surfaces.…”

Very low-temperature epitaxial growth of Mn5Ge3 and Mn5Ge3C0.2 films on Ge(111) using molecular beam epitaxy

“…Low temper-50 atures are indeed often used to reduce the segregation, diffusion, intermixing and island formation during growth processes of various materials like IV and III-V semiconductors or oxides [15,16,17,18,19,20]. We have first focused on the early stage of the C-doped Mn 5 Ge 3 thin films deposition by following in-situ the intensity of the patterns of the reflection high-energy electron 55 diffraction (RHEED).…”

Growth and characterization of crystalline gadolinium oxide on silicon carbide for high- application

“…According to the boundary condition at the oxide/SiC interface: ε SiC ∞ E SiC = ε Oxide ∞ E Oxide , the problem could be solved by the implementation of dielectrics with higher ε (high-K ). Alternative dielectrics with higher K values are already under investigation for MOSFETs and MIS structures on SiC, such as Al 2 O 3 [3,4], AlN [5], HfO 2 [6] and oxidized Ta 2 Si [7]. But these works are still in the very preliminary stage.…”