In this letter, low resistivity Ru and Ru-Ta alloy films, deposited via reactive sputtering, were evaluated as gate electrodes for p-and n-MOSFET devices, respectively. MOSFETs fabricated via a conventional process flow indicated that the work functions of Ru and Ru-Ta alloys were compatible with p-and n-MOSFET devices, respectively. Both of the metal gated devices eliminated gate depletion effects. Good MOSFET characteristics, such as -and mobility, were obtained for both Ru-gated PMOSFETs and Ru-Ta gated NMOSFETs.

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Hafnium dioxide, HfO 2 , thin films were prepared by radio frequency magnetron sputtering of thin hafnium layers, followed by an oxidation process. Ru was deposited on the HfO 2 as the gate electrode. An equivalent oxide thickness of 12.5 Å was obtained in Ru/HfO 2 /n-Si metal oxide semiconductor ͑MOS͒ capacitor with a low leakage current density of 1.7 ϫ 10 −2 A/cm 2 at Vg − V FB = 1 V in accumulation. The work function of Ru gate extracted from capacitance-voltage analysis was 5.02 eV, suggesting Ru has the appropriate work function for p-MOSFETs. Using the conductance method, a high interface state density of 1.3 ϫ 10 13 eV −1 cm −2 from the conduction band edge to the near midgap of Si was obtained in Ru/HfO 2 /n-Si MOS, compared to low interface density level of ϳ10 11 eV −1 cm −2 in p + poly Si/SiO 2 /n-Si MOS. To evaluate the thermal stability, the samples were subjected to a rapid thermal anneal in an argon ambient up to 900°C. The electrical characteristics of Ru/HfO 2 /n-Si MOS capacitor are discussed in detail with post-metal annealing temperatures.

Metalorganic remote plasma chemical vapor deposited SiO2/Al2O3 stacks were deposited on 6H p-type silicon SiC to fabricate a high-k gate stack SiC metal–oxide–semiconductor capacitors. Capacitance–voltage (C–V) and current–voltage (I–V) measurements were performed. C–V characteristics showed excellent properties at room and higher temperatures. Samples exhibited a slight negative flatband shift from which the net oxide charge (Qox) was calculated. Low leakage currents were observed even at high temperatures. I–V characteristics of Al2O3 were superior to those observed on AlN and SiO2 dielectrics on SiC.

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