1997
DOI: 10.1016/s0040-6090(96)09568-5
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Characteristics of ZnO thin films deposited onto Al/Si substrates by r.f. magnetron sputtering

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Cited by 85 publications
(11 citation statements)
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“…ZnO thin films are produced on silicon substrate by RF magnetron sputtering deposition [9][10][11], which are deposited at different sputtering powers. The chamber is first evacuated to 10 −6 Pa and then the oxygen/argon gas mixture is introduced for film deposition.…”
Section: Methodsmentioning
confidence: 99%
“…ZnO thin films are produced on silicon substrate by RF magnetron sputtering deposition [9][10][11], which are deposited at different sputtering powers. The chamber is first evacuated to 10 −6 Pa and then the oxygen/argon gas mixture is introduced for film deposition.…”
Section: Methodsmentioning
confidence: 99%
“…The O I component at the low binding energy of around 530.05 eV can be attributed to the oxygen in the ZnO structure binding with Zn or substitutional Al, 20 whereas the other component located at around 531.74 eV resulted from absorbed oxygen such as chemisorbed O − . 21,22 The relative portions of O 1s spectrums were O I (22.3%) and O II (77.7%) in AZO film, while those were O I (21.1%) and O II (78.9%) in BAZO at surface state. However, the difference in each spectrum was detected for 100 nm-etched films by depth profiling of XPS, as is shown in Fig.…”
Section: B Contentmentioning
confidence: 99%
“…Zinc oxide (ZnO) thin films are widely used in variety of applications such as thin-film transistor [1], transparent conducting films, solar cell material [2], UV photodetector [3], piezoelectric [4] and wear-resistant films [5], due to its several favorable properties, including wide bandgap, e.g. -3.37 eV [6], large exciton binding energy (60 meV) [6] and also having good transparency, which are excellent parameters for optoelectronic devices.…”
Section: Introductionmentioning
confidence: 99%