Two-dimensional (2D) h-BN and transition
metal dichalcogenides
(TMDs) are widely used as substrates of graphene because they are
insulating, atomically flat, and without dangling bonds. Usually,
it is believed that such insulating substrates will not affect the
electronic properties of graphene, especially when the moiré
pattern generated between them is quite small. Here, we present a
systematic study of the electronic properties of graphene/TMD heterostructures
with the period of the moiré pattern <1 nm, and our results
reveal an unexpected sensitivity of electronic properties in graphene
to the 2D insulating substrates. We demonstrate that there is a robust
and long-ranged superperiodicity of electronic density in graphene,
which arises from the scattering of electrons between the two valleys
of graphene in the graphene/TMD heterostructures. By using scanning
tunneling microscope and spectroscopy, three distinct atomic-scale
patterns of the electronic density are directly imaged in every graphene/TMD
heterostructure.