Characterization of boron-doped ZnO thin films prepared by magnetron sputtering with (100 −x)ZnO–xB2O3 ceramic targets

Wong, L. M.; Lai, Yi-Sheng

doi:10.1016/j.tsf.2015.04.003

Cited by 24 publications

(11 citation statements)

References 45 publications

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“…This, together with their deep CBMs (high dopability) and wide band gaps (see Fig. SnO 2 :F, 36,37 SnO 2 :Sb, 29,56-58 ZnO:F, 40,41 ZnO:B, [44][45][46] ZnO:Ga, 48,49 ZnO:Al, 47,70 etc.). Doped zinc oxide and tin oxide TCO materials have received particular attention in recent years on account of the indium supply risk, 69 often with such dopants as to yield n-type TCOs (e.g.…”

Section: Introductionmentioning

confidence: 87%

“…114 While prototype transparent televisions have now been developed and showcased by tech giants such as Samsung, these seem to adopt twin ITO electrodes, 115 wherein the challenge remains to find a cathode material with comparable optical transmittance and electrical resistivity to ITO but a lower work function for more efficient electron injection. 36,37,44,46,57,58 Much has been learned in recent years through computational modelling and experimental verification regarding the tuneability of the work function of doped transparent conducting oxide materials, 2,117,118 and it is anticipated that the continuing relationship between computational and experimental methods will deliver tangible development to this rapidly evolving field. Al or Ga, such that the surface charge carrier density is increased, will effectively lower its work function at the interface.…”

Section: Transparent Information Displaysmentioning

confidence: 99%

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n-Type doped transparent conducting binary oxides: an overview

et al. 2016

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This article focuses on n-type doped transparent conducting binary oxides -namely, those with the general formula M x O y :D, where M x O y is the host oxide material and D is the dopant element. Such materials are of great industrial importance in modern materials chemistry. In particular, there is a focus on the search for alternatives to indium-based materials, prompted by indium's problematic supply risk as well as a number of functional factors. The important relationship between computational study and experimental observation is explored, and an extensive comparison is made between the electrical properties of a number of the most interesting experimentally-prepared materials. In writing this article, we aim to provide both an accessible tutorial of the physical descriptions of transparent conducting oxides, and an up-to-date overview of the field, with a brief history, some key accomplishments from the past few decades, the current state of the field as well as postulation on some likely future developments.

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Section: Introductionmentioning

confidence: 87%

Section: Transparent Information Displaysmentioning

confidence: 99%

n-Type doped transparent conducting binary oxides: an overview

et al. 2016

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“…In principle, we investigate the optical and structural properties of sol-gel dip-synthesized group III (B, Al, Ga, and In)-doped ZnO thin films in this current work. The structural, transport, and optical properties of B-doped ZnO, Al-doped ZnO, Ga-doped ZnO, and In-doped ZnO thin films are found to exhibit different properties than un-doped ZnO thin films [8,[12][13][14][15][16][17][18][19][20]. Deposition of undoped ZnO and group III (B, Al, Ga, and In)-doped ZnO thin films can be achieved by using techniques such chemical vapor deposition [2,21], magnetron sputtering [15,22], pulse laser deposition [23], electrochemical deposition [24], and the sol-gel method [14,25].…”

Section: Introductionmentioning

confidence: 99%

Structural, Optoelectrical, Linear, and Nonlinear Optical Characterizations of Dip-Synthesized Undoped ZnO and Group III Elements (B, Al, Ga, and In)-Doped ZnO Thin Films

et al. 2020

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Undoped ZnO and group III (B, Al, Ga, and In)-doped ZnO thin films at 3% doping concentration level are dip-coated on glass substrates using a sol-gel technique. The optical properties of the as-prepared thin films are investigated using UV–Vis spectrophotometer measurements. Transmittance of all investigated thin films is found to attain high values of ≥80% in the visible region. We found that the index of refraction of undoped ZnO films exhibits values ranging between 1.6 and 2.2 and approximately match that of bulk ZnO. Furthermore, we measure and interpret nonlinear optical parameters and the electrical and optical conductivities of the investigated thin films to obtain a deeper insight from fundamental and practical points of view. In addition, the structural properties of all studied thin film samples are investigated using the XRD technique. In particular, undoped ZnO thin film is found to exhibit a hexagonal structure. Due to the large difference in size of boron and indium compared with that of zinc, doping ZnO thin films with these two elements is expected to cause a phase transition. However, Al-doped ZnO and Ga-doped ZnO thin films preserve the hexagonal phase. Moreover, as boron and indium are introduced in ZnO thin films, the grain size increases. On the other hand, grain size is found to decrease upon doping ZnO with aluminum and gallium. The drastic enhancement of optical properties of annealed dip-synthesized undoped ZnO thin films upon doping with group III metals paves the way to tune these properties in a skillful manner, in order to be used as key candidate materials in the fabrication of modern optoelectronic devices.

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“…Both electrodes are based on transparent conductive oxide materials (TCOs), especially on indium tin oxide (ITO) [10] or fluorine-doped tin oxide (FTO) [11]. Interesting alternative to ITO is also ZnO doped with trivalent elements such as Al [12][13][14][15], Ga [12,16] or B [17] which is a material that can even improve its electrical properties, like conductivity, during annealing process required in DSSC.…”

Section: Introductionmentioning

confidence: 99%

The influence of the dye adsorption time on the DSSC performance

Krawczak

Zdyb

2019

E3S Web Conf.

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Dye-sensitized solar cells (DSSC) of third generation photovoltaic technology, are nowadays one of the most investigated due to possibility to apply ecological and natural materials (dyes) such as alizarin. This paper reports the influence of electrode immersion time on alizarinbased dye-sensitized solar cells performance. The absorption spectra of alizarin dye were measured in the range of 300-800 nm. Fully structured dye-sensitized cells of working area equal to 0.8 cm 2 have been fabricated in the sandwich way using four different immersion times of the TiO2 electrodes: 10', 40', 1 h, 24 h. The high-performance EL-HPE electrolyte was instilled into the space between electrodes. Current-voltage (I-V) dark and illuminated characteristics have been measured using solar light simulator. Solar cells characterization was carried out under standard test conditions. The solar irradiance was set at 100 mW/cm 2 and temperature of the module was maintained at 25°C. Characteristic parameters of the fabricated cells were determined on the basis of measured I-V curves. Series resistances were extracted from I-V characteristics at an open circuit voltage using first order derivatives. It was found that 60 minutes of electrode immersion in dye solution is sufficient to obtain appropriate stage of the dye adsorption.

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Characterization of boron-doped ZnO thin films prepared by magnetron sputtering with (100 −x)ZnO–xB2O3 ceramic targets

Cited by 24 publications

References 45 publications

n-Type doped transparent conducting binary oxides: an overview

n-Type doped transparent conducting binary oxides: an overview

Structural, Optoelectrical, Linear, and Nonlinear Optical Characterizations of Dip-Synthesized Undoped ZnO and Group III Elements (B, Al, Ga, and In)-Doped ZnO Thin Films

The influence of the dye adsorption time on the DSSC performance

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