Characterization of damage in ion implanted Ge

Abstract

It has been observed that ion implantation into Ge at room temperature creates severe surface craters extending several thousand angstroms into the surface, and results in the incorporation of large quantities of C and 0 impurities ( -50 impurities/ion). This effect has a strong temperature dependence and essentially disappears for implantations performed at liquid nitrogen temperature. The systematics of this effect are presented, preliminary annealing results are cited, and possible mechanisms are discussed.

Ion-beam-induced porosity of GaN

“…Similar effects have been observed in some other semiconductors, such as Ge, 6,7 InSb, 8 and GaSb. 9 In general, amorphousness is not necessarily the final state of a semiconductor exposed to ion bombardment.…”

“…One of the possible explanations for this effect is energetically favorable agglomeration of vacancy-like defects, generated by an ion beam in an amorphous matrix, resulting in the formation of voids. 6,7,10 In addition, in the case of GaN, the porosity reported here may be also stimulated by ion-beam-induced material decomposition with the formation of N 2 gas bubbles in a Ga-rich matrix, a process which has been discussed elsewhere. 5 In conclusion, anomalous swelling of GaN films bombarded with heavy ions has been observed.…”

Void Formation and Structure Change Induced by Heavy Ion Irradiation in GaSb and InSb

“…Similar phenomena occur in irradiated Ge surfaces (for example, see Refs. [19][20][21][22][23][24][25][26][27]). It is clarified that such anomalous phenomena occur as a result of the movement of point defects induced by ion irradiation, and these structures are generated after void formation.…”

Ion Irradiation-Induced Changes in Surface Morphology of InSb

“…Similar structures have been observed in other antimonides, such as GaSb [2], as well as other semiconductors, including germanium [3]. Although ion irradiation of other semiconductors results in the formation of porous layers with uniform, fairly flat surfaces, the irradiation of InSb with high energy ions results in the formation of porous layers with varying surface morphologies.…”