Characterization of frequency dispersion in Ti-indiffused lithium niobate optical devices

Nightingale, J. L.; Becker, Richard A.; Willis, Paula C.; Vrhel, J. S.

doi:10.1063/1.98898

Cited by 24 publications

(3 citation statements)

References 9 publications

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“…[2], thus improving fabrication practicality. The silicon photonic features were made on a highresistivity Si handle wafer (measured resistivity of the handle after HF etch to remove native oxide is around 6x10 3 .cm), potentially mitigating piezoelectric resonances from traditional LN substrates [18]. As described below, the optical input and output from the Adiabatic waveguide tapers were designed to achieve a vertical inter-layer transition (from Si to LN, and the reverse).…”

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confidence: 99%

Bonded thin film lithium niobate modulator on a silicon photonics platform exceeding 100 GHz 3-dB electrical modulation bandwidth

et al. 2018

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We demonstrate an ultra-high-bandwidth Mach-Zehnder electro-optic modulator (EOM), based on foundry-fabricated silicon (Si) photonics, made using conventional lithography and wafer-scale fabrication, oxide-bonded at 200C to a lithium niobate (LN) thin film. Our design integrates silicon photonics light input/output and optical components, such as directional couplers and low-radius bends. No etching or patterning of the thin film LN is required. This hybrid Si-LN MZM achieves beyond 106 GHz 3-dB electrical modulation bandwidth, the highest of any silicon photonic or lithium niobate (phase) modulator.

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confidence: 99%

Bonded thin film lithium niobate modulator on a silicon photonics platform exceeding 100 GHz 3-dB electrical modulation bandwidth

et al. 2018

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“…By using external optical fiber splitters, threeand four-channel multiplexers can also be formed. The circuits will be built on x-cut, y-propagating crystals using TE polarized 30 The minimum interferometer-to-interferometer spacing is 250 jim and each interferometer is about 15 mm long.…”

Section: Multiplexer Fabricationmentioning

confidence: 99%

Optical coherence multiplexing for interprocessor communications

Chu¹

1991

Opt. Eng.

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“…三倍频方面, 2009年, Shu等 [19] 设计M型腔 VECSEL, 基频光发射波长为1064 nm, 采用在腔内不同臂中分别插入非线性晶体LBO进行倍频和频, 得到了450 mW的紫外输出功率, 紫外激光波长为355 nm; 2016年, Polanik和Alexander [20] 设计了Z型折叠腔结构VECSEL, 将和频晶体和倍频晶体一前一后放置放在靠近后端镜的束腰处, 来提高转换效率消除走离角, 在327 nm处获得了最大输出功率为23 mW的紫外激光. 四倍频方面, 2008年Kaneda和Yarborough [21] 通过近红外976 nm光泵浦VECSEL的非线性频率转换, 在244 nm波长处获得215 mW的连续输 [22] 度, 明显提升频率转换的效率 [23][24][25] . 此外, 还可以…”

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Tunable ultraviolet laser based on intracavity third harmonic generation of external cavity surface emitting laser

Cheng,

Wu,

Yan

et al. 2024

Acta Phys. Sin.

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Ultraviolet laser has high frequency, short wavelength, large single-photon energy, and high spatial resolution, and has wide applications in many fields such as fine processing, life sciences, spectroscopy, etc. This paper reports a wavelength tunable ultraviolet laser based on intracavity third harmonic generation using an external-cavity surface-emitting laser. The W-type resonant cavity of the laser is composed of a distributed Bragg reflector (DBR) at the bottom of the gain chip, three plane-concave mirrors, and a rear plane mirror. On the arm containing the gain chip, a birefringent filter is inserted at the Brewster angle as the polarization and wavelength tuning element, which also can narrow the linewidth of the fundamental laser to a certain extent. A type-I phase-matched LBO crystal is placed on the beam waist between the folding mirrors M2 and M3 to convert the 980 nm fundamental laser to 490 nm blue light, and a type-I phase-matched BBO crystal is inserted on the beam waist near the rear mirror to produce 327 nm ultraviolet output from the remained 980 nm fundamental laser and the frequency-doubled 490 nm second harmonic. Before the BBO crystal, a half wave plate at 980 nm is employed to change the polarization of the fundamental laser, so to meet the type-I phase-matching condition of the used BBO crystal. Thanks to the larger nonlinear coefficient of the type-I phase-matched BBO crystal, and its obviously higher transmittance at 327 nm wavelength than the usually used LBO crystal, an output power of 538 mW at 327 nm ultraviolet wavelength, corresponding to a conversion efficiency of 1.1% from pump light to ultraviolet laser, is achieved. The experiment is performed under conditions of 15 ℃ temperature, 47 W absorbed pump power, 5 mm-length LBO and 5 mm-length BBO crystals. By using a 2 mm-thickness birefringent filter as the tuning element, 34.1 nm tuning range of the 980 nm fundamental laser, 14.3 nm tuning range of the 490 nm second harmonic, and 8.6 nm tuning range of the 327 nm third harmonic are obtained. The ultraviolet laser exhibits good beam quality as well as acceptable power stability with the maximum power fluctuation less than 2% within 4.5 hours.

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Characterization of frequency dispersion in Ti-indiffused lithium niobate optical devices

Cited by 24 publications

References 9 publications

Bonded thin film lithium niobate modulator on a silicon photonics platform exceeding 100 GHz 3-dB electrical modulation bandwidth

Bonded thin film lithium niobate modulator on a silicon photonics platform exceeding 100 GHz 3-dB electrical modulation bandwidth

Optical coherence multiplexing for interprocessor communications

Tunable ultraviolet laser based on intracavity third harmonic generation of external cavity surface emitting laser

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