Characterization of Nitride Layer on 6H-SiC Prepared by High-Temperature Nitridation in NH₃

Abstract

The nitride layers were prepared by direct thermal nitridation of 6H-SiC substrates at 1200-1570 C in a NH 3 atmosphere. The layer was characterized by using X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and Raman scattering spectroscopy. The thickness of the nitride layers prepared at lower than 1400 C was estimated to be less than 10 nm. The higher nitridation temperature resulted in the formation of a thicker surface layer. XPS measurement showed that the surface layer was composed of N, Si, C and O. Peaks corresponding to -Si 3 N 4 were detected in the Raman spectra and the XRD patterns of the sample prepared at higher than 1500 C, indicating the crystallization of the nitrided layer.

Investigation on AlN epitaxial growth and related etching phenomenon at high temperature using high temperature chemical vapor deposition process

“…AlN layers were directly grown on the substrates without the use of any low temperature buffer or nucleation layer [15] or protective layer [16,25]. Even if the presence of ammonia is highly required to prevent AlN decomposition at high temperature [30], the ramp up to deposition temperature were realized without NH 3 in order to prevent the possible formation of a silicon nitride layer on SiC substrates surface [31,32]. and crystalline quality were evaluated by X-ray diffraction on o/ 2y scans and o scans (rocking curves), respectively.…”

Об Адсорбции Газов На Карбиде Кремния: Простые Оценки

“…В настоящей работе используются первый и третий подходы. В качестве адсорбатов рассмотрены N 2 и NH 3 и атомы N. Отметим, что проблема взаимодействия газов N 2 и NH 3 с поверхностью SiC возникла в связи с изучением интерфейса SiO 2 /SiC [13][14][15][16][17]. При этом имеет место диссоциация молекул.…”

“…Найти какие-либо работы непосредственно по адсорбции N 2 , N и NH 3 на SiC не удалось. Поэтому ниже мы будем основываться на косвенных данных и некоторых предположениях, так как экстраполировать на случай поверхности результаты работ [13][14][15][16][17], полученные для объема, не корректно.…”

Interface State Density between Direct Nitridation Layer and SiC Estimated from Current Voltage Characteristics of MIS Schottky Diode

“…Few papers have reported about nitridation of SiC surface. We have tried to form an insulating nitride layer on SiC by direct nitridation [3], [4]. Chai et al reported a Si 3 N 4 passivation layer grown on the 4H-SiC (0001) surface by direct atomic source nitridation at various substrate temperatures [5].…”

“…Chai et al reported a Si 3 N 4 passivation layer grown on the 4H-SiC (0001) surface by direct atomic source nitridation at various substrate temperatures [5]. Although the direct nitridation seemed to be an attractive method to form insulating layer on SiC, it has been difficult to get the nitride layer thicker than several nm by direct nitridation method [3]- [5].…”